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机译:突然转化溅射种植Ga掺杂的ZnO膜中的电导率和带间隙通过生长环境的变化:氧分压的影响
Chonnam Natl Univ Dept Mat Sci &
Engn Photon &
Elect Thin Film Lab 300 Yongbong Dong Gwangju 500757 South Korea;
Korea Basic Sci Inst Adv Nanosurface Res Grp Gwahak Ro Daejeon 34133 South Korea;
Chonnam Natl Univ Dept Mat Sci &
Engn Photon &
Elect Thin Film Lab 300 Yongbong Dong Gwangju 500757 South Korea;
Korea Basic Sci Inst Gwangju Ctr 300 Yong Bong Dong Gwangju 500757 South Korea;
GZO films; RF magnetron sputtering; Low-temperature hall effect; Intrinsic defects and defect-complex; Sudden change in conductivity;
机译:突然转化溅射种植Ga掺杂的ZnO膜中的电导率和带间隙通过生长环境的变化:氧分压的影响
机译:生长环境中氧分压对磁控溅射InCdO薄膜性能和缺陷行为的影响
机译:氧分压在生长环境中对磁控溅射Incdo膜性能和缺陷行为的影响
机译:氧分压对GA掺杂ZnO薄膜局部结构性能的影响
机译:通过高压氧气溅射沉积LaxBa1-xSnO3薄膜的迁移率优化
机译:射频溅射制备Ga掺杂ZnO薄膜的光电性能和电稳定性
机译:受氧分压影响影响的溅射ZnO薄膜的生长性能