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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Self-biased magnetoelectric coupling effect in the layered La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic heterostructure
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Self-biased magnetoelectric coupling effect in the layered La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic heterostructure

机译:层间LA0.7SR0.3MNO3 / BATIO3 / LA0.7SR0.3MNO3多重异质结构中的自偏置磁电耦合效果

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摘要

The experimental observation and analysis of self-biased magnetoelectric (ME) coupling effect in the layered La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 (LSMO/BTO/LSMO) multiferroic heterostructure were reported, and the epitaxial layered LSMO/BTO/LSMO heterostructure was grown on (001) oriented LaAlO3 (LAO) single crystal substrate by using pulsed laser deposition technique. The microstructure, ferro-magnetic and ferroelectric properties were studied. The exchange bias effect in the LSMO/LAO interface and the compressive strain gradient field in the heterostructure induced by lattice mismatch resulted in a built-in magnetic bias field (H-bias) in the LSMO layer, which provided limited ME coupling effect at zero applied DC bias magnetic field. It may potentially be used to micro-nano devices especially for multiple state memories. (C) 2018 Elsevier B.V. All rights reserved.
机译:报道了单层LA0.7SR0.3MNO3 / BATIO3 / LA0.7SR0.3MNO3(LSMO / BTO / LSMO)多二二种异质结构的自偏偏磁电(ME)耦合效应的实验观察和分析。和外延层LSMO / BTO / LSMO异质结构通过使用脉冲激光沉积技术在面向的LAALO3(LAO)单晶基板上生长在(001)上。 研究了微观结构,铁磁和铁电性能。 通过晶格错配诱导的LSMO / LAO接口中的交换偏置效应和通过晶格错配引起的异质结构中的压缩应变梯度场产生LSMO层中的内置磁偏置场(H偏置),其为零时的ME耦合效果提供限制 应用直流偏置磁场。 它可能潜在地用于微纳米器件,特别是对于多个状态存储器。 (c)2018年elestvier b.v.保留所有权利。

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