首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Investigation of GaBi1-xSbx based highly mismatched alloys: Potential thermoelectric materials for renewable energy devices and applications
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Investigation of GaBi1-xSbx based highly mismatched alloys: Potential thermoelectric materials for renewable energy devices and applications

机译:基于GABI1-XSBX的高度不匹配合金的研究:可再生能源装置和应用的潜在热电材料

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The high-performance thermoelectric materials are considered a potential resource for clean and sustainable energy. Highly mismatched alloys (HMAs), that are admired for the dramatic modifications in their electronic band structures can essentially play important role in developing high-performance thermoelectric materials. Here, we explore the potential of GaBi1-xSbx based HMAs for their thermoelectric applications via density functional theory coupled with the Boltzmann transport theory. To perform a comprehensive analysis, four different Sb alloying compositions such as GaBi, GaBi0.875Sb0.125, GaBi0.75Sb0.25, and GaBi0.625Sb0.375, are considered. It is found that the Sb replacement over Bi in GaBi1-xSbx has stimulated two major modifications in the electronic band structure: the band-gap enhancement, and contraction in the curvature of conduction band minimum. These features have remarkably evolved the thermoelectric properties of GaBi1-xSbx as a function of Sb contents. The significant increase in Seebeck coefficient and decrease in the electrical conductivity of GaBi1-xSbx alloy as a function of Sb content have resulted in large values of thermoelectric power factor as well as the figure of merit (ZT). Considerable improvement in the ZT values as a function of Sb has been recorded that approaches to similar to 1.0 for GaBi0.625Sb0.375 at room temperature. The occurrence of optimal thermoelectric coefficient values, at attainable doping levels below the Fermi level reveals the predominantly p-type nature of the GaBi1-xSbx. Hence, GaBi1-xSbx (GaBi0.625Sb0.375 in particular) exhibits interesting thermoelectric properties at room temperature, and is therefore believed to be good candidate material for room temperature based thermoelectric devices and applications. (c) 2017 Elsevier B.V. All rights reserved.
机译:高性能热电材料被认为是清洁和可持续能量的潜在资源。对于在其电子频带结构中令人震惊的合金(HMAS),其在其电子频带结构中令人钦佩的合金可以在开发高性能热电材料方面具有重要作用。在这里,我们通过与Boltzmann运输理论相结合的密度泛函理论,探索基于GABI1-XSBX基于GABI1-XSBX的HMA的潜力。为了进行综合分析,考虑四种不同的SB合金化组合物,如GABI,GABI0.875SB0.125,GABI0.75SB0.25和GABI0.625SB0.375。结果发现,GABI1-XSBX中的SB替代在GABI1-XSBX中刺激了电子频带结构中的两个主要修改:带间隙增强,以及传导带的曲率中的缩小。这些特征显着地发展了GABI1-XSBX的热电性能作为SB含量的函数。由于Sb含量的函数,Gabi1-XSBX合金的塞贝克系数和导电性导电性的显着增加导致了大量的热电功率因数以及优异(ZT)的值。已经记录了作为SB的函数的ZT值的相当大的改进,其在室温下为GABI0.625SB0.375的方法类似于1.0。在FERMI水平以下可达的掺杂水平下发生最佳热电系数值揭示了GABI1-XSBX的主要P型性质。因此,GABI1-XSBX(特别是GABI0.625SB0.375)在室温下表现出有趣的热电性能,因此被认为是基于室温的热电装置和应用的良好候选材料。 (c)2017年Elsevier B.V.保留所有权利。

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