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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Fabrication of porous silicon carbide ceramics at low temperature using aluminum dihydrogen phosphate as binder
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Fabrication of porous silicon carbide ceramics at low temperature using aluminum dihydrogen phosphate as binder

机译:使用磷酸二氢磷酸铝作为粘合剂在低温下制造多孔碳化硅陶瓷

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In the present work, phosphate-bonded porous silicon carbide (SiC) ceramics were prepared by using aluminum dihydrogen phosphate as binder. The morphologies, phase composition, microstructures, mechanical strength, porosity and bulk density of the porous ceramics were investigated. It was found that the aluminum dihygrogen phosphate binder bonding method was a novel and low cost process to prepare near net-shape and high strength porous SiC ceramics at low temperature. The bonding mechanism was A type and B type aluminum metaphosphate which formed from aluminum dihygrogen phosphate during heat treatment bonded the SiC particles together to form porous ceramics. With temperature increasing, the phase of B type gradually transformed into A type aluminum metaphosphate, and the transformation was completed at 900 degrees C. The A type aluminum metaphosphate began to decompose into AlPO4 and P2O5 when the sintered temperature higher than 908 degrees C. The flexural strength of the porous SiC ceramics reached the maximum at 900 degrees C and decreased sharply with temperature increasing. The decomposition of A type aluminum metaphosphate made the strength reduce. The bulk density increased with aluminum dihydrogen phosphate content and decreased with temperature, in contrast, the porosity decreased with increasing binder content and temperature. (C) 2019 Elsevier B.V. All rights reserved.
机译:在本作本作中,通过使用磷酸铝作为粘合剂制备磷酸粘合的多孔碳化硅(SiC)陶瓷。研究了多孔陶瓷的形态,相组合物,微观结构,机械强度,孔隙率和堆积密度。发现铝二缩磷酸铝粘合剂粘合方法是一种新的和低成本过程,在低温下制备近净形和高强度多孔SiC陶瓷。粘合机理是一种类型和B型铝偏磷酸铝,其在热处理期间由磷酸铝二氢磷酸铝形成,将SiC颗粒粘合在一起以形成多孔陶瓷。随着温度的增加,B型相位逐渐转化成铝偏磷酸盐型铝磷酸盐,在900℃下完成转化。当烧结温度高于908℃时,铝偏磷酸型铝偏磷酸盐开始分解为ALPO4和P2O5。该多孔SiC陶瓷的弯曲强度在900℃下达到最大值,并且温度升高急剧下降。铝偏磷酸盐的分解使得强度减少。堆积密度随磷酸二氢铝含量的增加并用温度降低,相比,孔隙率随着粘合剂含量和温度的增加而降低。 (c)2019 Elsevier B.v.保留所有权利。

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