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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Tetragonal tungsten bronze phase thin films in the K-Na-Nb-O system: Pulsed laser deposition, structural and dielectric characterizations
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Tetragonal tungsten bronze phase thin films in the K-Na-Nb-O system: Pulsed laser deposition, structural and dielectric characterizations

机译:K-NA-NB-O系统中四边形钨青铜相薄膜:脉冲激光沉积,结构和介电特征

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摘要

Pulsed laser deposition parameters have been determined to synthesize pure Tetragonal Tungsten Bronze (TTB) phase thin films in the (K,Na)-Nb-O system (KNN). In relation to the high volatility of alkaline elements, it was found that the target composition and the target-substrate distance are of first importance. The TTB phase was identified by X-ray and electron diffraction and the surface microstructure consisting mainly of nanorods supports the formation of hallmark of the TTB phase. Poly-oriented nanorods have been obtained on both C-plane sapphire and (111)Pt/TiO2/SiO2/(001)Si substrates whereas horizontal nanorods oriented along the (hk0) planes have been grown on (100) and (110) SrTiO3. All the nanorods are parallel together when grown on (110) SrTiO3 and they present two in-plane orientations rotated of 90 degrees from each other on (100) SrTiO3. Dielectric characteristics (dielectric permittivity er, and loss tangent tan delta) have been measured at low (1 kHz - 1 MHz) and high (1 GHz-40 GHz) frequencies, on films deposited on Pt coated silicon and sapphire, respectively. A value of epsilon(r) = 200 at 1 kHz with tan delta = 0.015 were measured in a parallel plate capacitor configuration, whereas epsilon(r) = 130 and tan delta = 0.20 at 10 GHz were retrieved from transmission lines printed on the KNN TTB thin film grown on C-plane sapphire. Raman investigations of the TTB films were performed in the temperature range 77-873 K, confirming the TTB phase formation and the absence of structural transition. Piezoelectric Force Microscopy measurements evidenced a piezoelectric signal although no switching could be performed. However the dielectric measurements, complicated by high leakage currents when a DC voltage was applied, did not evidence any proof of ferroelectricity for the undoped KNN TTB films whereas results reported on other niobates (A,A')(6)Nb10O30 (with A: K, Na and A': Sr, Ba, Ca) have shown Curie temperatures, lying between 156 degrees C and 560 degrees C, separating the paraelectric phase (space group: P4/mbm N degrees 127) and the ferroelectric one (space group: P4bm N degrees 100). (C) 2020 Elsevier B.V. All rights reserved.
机译:已经确定脉冲激光沉积参数在(K,Na)-NB-O系统(KNN)中合成纯四方钨青铜(TTB)相薄膜。关于碱性元素的高挥发性,发现靶组合物和靶衬底距离是首先重要的。通过X射线和电子衍射识别TTB相,并且主要由纳米棒组成的表面微观结构支持TTB相的标志的形成。已经在C面蓝宝石和(111)Pt / TiO2 / SiO 2 /(001)Si基板上获得了聚取纳米棒,而沿(HK0)平面的水平纳米棒已经生长在(100)和(110)SRTIO3上。所有纳米棒在(110)SRTIO3上生长时,所有纳米棒都在一起在一起,并且它们在(100)SRTIO3上彼此彼此旋转了两个面内取向。在低(1kHz - 1MHz)和高(1GHz-40GHz)频率下测量介电特性(介电介电常数ER和损耗TAN DERTA)分别在沉积在PT涂覆的硅和蓝宝石上的薄膜上测量。在平行板电容器配置中测量1kHz的ε(R)= 200的ε(R)= 200的值,而epsilon(r)= 130和tan delta = 0.20,从kNN上印刷的传输线检索10GHz在C平面蓝宝石上种植的TTB薄膜。 TTB膜的拉曼研究在77-873k的温度范围内进行,确认TTB相形成和不存在结构转变。压电力显微镜测量值证明了压电信号,尽管可以执行切换。然而,当施加直流电压时,通过高漏电流复杂的电介质测量并没有证据任何用于未掺杂的KNN TTB膜的铁电性证明,而在其他铌酸盐(A,A')(6)NB10O30上报告的结果(A,A')(6)NB10O30(具有: K,NA和A':SR,BA,CA)已经显示居里温度,介于156℃和560摄氏度之间,分离节水相(空间组:P4 / MBM N度127)和铁电(空间组) :P4BM N度100)。 (c)2020 Elsevier B.v.保留所有权利。

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