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首页> 外文期刊>Journal of Applied Polymer Science >Green synthetic route of carbon quantum dot-reinforced graphene oxide-poly(vinylidene fluoride-co-hexa fluoropropylene) nanocomposites: Toward high dielectric constant and suppressed loss
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Green synthetic route of carbon quantum dot-reinforced graphene oxide-poly(vinylidene fluoride-co-hexa fluoropropylene) nanocomposites: Toward high dielectric constant and suppressed loss

机译:碳量子点增强石墨烯氧化物 - 聚(偏二氟乙烯 - 共六六氟丙烯)纳米复合材料的绿色合成途径:介电常数和抑制损失

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A simple and green method was developed to fabricate carbon quantum dot@ graphene oxide filled poly (vinylidene fluoride-co-hexa-fluoropropylene) [CQD@GO-P(VDF-HFP)] nanocomposite films via solution casting technique. The synthetic approach was to bring CQD from bilva leafs, a renewable and sustainable resource. The effect of CQD on dielectric properties, dielectric constant, and dielectric loss in the presence of GO along with P (VDF-HFP) matrix were investigated. The result showed that the nanocomposites having 1.5 wt % of CQD@GO-P(VDF-HFP) with higher dielectric constant (approximate to 144) at 100 Hz and suppressed loss (<1) at 1000 Hz, which is well supported by field emission scanning electron microscopy (FESEM) study. The FESEM study shows a river iceland morphology with a channel-like structure along with voids and pores that may provide a conducting network, which tends to have Maxwell Wagner-Sillars or interfacial polarization results in a high-end properties outcome. Furthermore, the suppressed loss enhanced the possibility of end use performance of CQD@GO-P(VDF-HFP) matrix with a referral memorandum of percolation theory. Thus, the present work demonstrated a new approach to develop high dielectric constant and negligible loss materials in the field of embedded devices for electronic industries through green synthetic approach. (c) 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 47850.
机译:开发了一种简单和绿色的方法,以通过溶液浇铸技术制造碳氧化碳氧化物填充聚(偏二氟乙烯 - 共六六氢氟丙烯)纳米复合膜的碳氧化物填充聚(偏二氟-P(VDF-HFP)]纳米复合膜。合成方法是从Bilva叶子,可再生和可持续资源带来CQD。研究了CQD对介电性质,介电常数和介电损耗的介电性能,在存在于P(VDF-HFP)基质中的介电性质,介电常数和介电损失。结果表明,具有1.5wt%的纳米复合材料,其具有较高介电常数(近似为144)的CQD-P(VDF-HFP),在100 Hz和1000Hz的抑制损耗(<1),这是由场得到的发射扫描电子显微镜(FESEM)研究。 FeSEM研究显示了一种冰岛冰岛形态,其沟道状结构以及可提供导电网络的空隙和孔,这倾向于具有高端特性结果的麦克斯韦尔·瓦格纳 - Sillars或界面偏振导致。此外,抑制损失增强了CQD @ Go-P(VDF-HFP)矩阵的最终使用性能的可能性与渗滤理论的推荐备忘录。因此,本工作证明了通过绿色合成方法在嵌入式设备领域中开发高介电常数和可忽略的损失材料的新方法。 (c)2019 Wiley期刊,Inc.J.Phill。聚合物。 SCI。 2019,136,47850。

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