首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Fabrication of Bi19S27I3 nanorod cluster films for enhanced photodetection performance
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Fabrication of Bi19S27I3 nanorod cluster films for enhanced photodetection performance

机译:BI19S27I3纳米棒簇膜的制造,用于增强的光电探测性能

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Thin-film photodetectors built from one-dimensional nanostructures have attracted extensive attention due to their significance in basic scientific research and potential technological applications. It is still desirable to develop new materials with a wide response range for application in photodetectors. In this work, a Bi19S27I3 nanorod cluster film has been successfully fabricated on various rigid substrates by a facile solvothermal method. The component nanorods exhibit an oriented growth along the [001] direction. The UV-Vis-NIR absorption spectrum shows a continuous strong absorption spanning the whole visible light to near-infrared region and presents a direct band gap of 0.83 eV for the prepared Bi19S27I3 nanorod clusters. The spectral photoresponse of the Bi19S27I3-based photodetector device demonstrates a broad photoresponse ranging from ultraviolet to near infrared. The photocurrent results reveal that the photodetector exhibits a more sensitive response towards near-infrared light than visible light. Furthermore, the photodetector based on the Bi19S27I3 nanorod cluster film shows significantly enhanced photodetection performance compared to Bi19S27I3 nanorod powder. The photocurrent and on-off ratio of the prepared nanorod cluster film are respectively up to 400 times and several times higher than those of the powder sample. The on-off ratios are about 265 and 66 under NIR illumination and 48 and 11 under visible light for the film and powder samples, respectively. These results suggest a great potential application of the prepared Bi19S27I3 nanorod cluster film in optoelectronic devices.
机译:由于基础科学研究和潜在的技术应用,由一维纳米结构构建的薄膜光电探测器引起了广泛的关注。仍然希望在光电探测器中应用具有宽响应范围的新材料。在这项工作中,通过容易的溶剂热法在各种刚性基板上成功地制造了BI19S27I3纳米杆簇膜。组分纳米棒沿着[001]方向表现出取向的生长。 UV-Vis-Nir吸收光谱显示出跨越整个可见光的连续强吸收到近红外区域,并且对于制备的BI19S27I3纳米杆簇具有0.83eV的直接带隙。基于BI19S27I3的光电探测器装置的光谱光响应演示了从紫外线到近红外线的宽光响应。光电流结果表明,光电探测器对近红外光具有比可见光更敏感的响应。此外,基于BI19S27I3纳米棒膜的光电探测器显示出与BI19S27I3纳米棒粉末相比显着增强的光电检测性能。制备的纳米棒簇膜的光电流和开关比率分别高达400倍,比粉末样品高出几倍。开关比率在膜和粉末样品的可见光下,48和11下约265和66。这些结果表明制备的BI19S27I3纳米芯片簇在光电器件中的巨大潜在应用。

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