首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >From endohedral cluster superconductors to approximant phases: synthesis, crystal and electronic structure, and physical properties of Mo8Ga41-xZnx and Mo7Ga52-xZnx
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From endohedral cluster superconductors to approximant phases: synthesis, crystal and electronic structure, and physical properties of Mo8Ga41-xZnx and Mo7Ga52-xZnx

机译:从Endohedral簇超导体到近似阶段:合成,晶体和电子结构,以及Mo8Ga41-xZnx和Mo7ga52-xznx的物理性质

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摘要

Using the crystal-growth joint flux technique based on the combination of two aliovalent low-melt metals, gallium and zinc, we adjust the gross valence electron count in the Mo-Ga-Zn system and produce the Mo8Ga41-xZnx and Mo7Ga52-xZnx intermetallic compounds. Gradual reduction in the valence electron count first leads to the Zn for Ga substitution in the Mo8Ga41 endohedral cluster superconductor, accompanied by the formation of Zn-containing clusters in the crystal structure and by the gradual suppression of superconductivity. Mo8Ga41-xZnx with x = 7.2(2) exhibits superconducting properties below T-C = 4 K, whereas there is no superconducting transition at temperatures above 2 K for the limiting composition of x = 11.3(2). Further, the Mo7Ga52-xZnx phase is formed from the flux with a higher content of Zn. Mo7Ga52-xZnx crystallizes in the Mo7Sn12Zn40 structure type with a narrow homogeneity range and exhibits metallic behavior with no sign of superconductivity down to at least 1.8 K. Its experimental valence electron count of 2.9 e per atom is below that of endohedral gallium cluster superconductors. Electronic structures of Mo8Ga41-xZnx and Mo7Ga52-xZnx feature the opening of a pseudogap slightly below the Fermi level indicating the specific stability of these structure types at the valence electron count of 3.2 e per atom and 2.7 e per atom, respectively.
机译:使用基于两种亚价低熔融金属,镓和锌的组合的晶体生长关节助焊剂技术,我们调整Mo-Ga-Zn系统的总价值电子计数,并产生Mo8Ga41-XZNX和Mo7Ga5​​2-XZNX金属间金属金属化合物。逐渐减少了价值第一导致Mo8Ga41内胚组簇超导体中的Ga取代的Zn,伴随着形成含有Zn的簇的晶体结构和通过逐渐抑制超导性。 MO8GA41-XZNX具有X = 7.2(2),表现出低于T-C = 4k的超导性能,而在高于2K的温度下没有超导转变,对于X = 11.3(2)的限制组合物。此外,MO7GA52-XZNX相由具有较高含量的Zn的助焊剂形成。 Mo7Ga5​​2-XZNX在MO7SN12ZN40结构型中结晶,均匀性范围窄,并且表现出金属行为,没有超导迹象下降至至少1.8K。其每种原子的实验价电子计数低于Endoh对镓簇超导体的2.9 e。 Mo8Ga41-xZnx和Mo7Ga5​​2-xZnx的电子结构具有略低于FERMI水平的假阴影的开度,其分别表示这些结构类型在每次原子的比例电子计数和2.7 e /原子的比例中的具体稳定性。

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