首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Performance enhancement of perovskite solar cells via material quality improvement assisted by MAI/IPA solution post-treatment
【24h】

Performance enhancement of perovskite solar cells via material quality improvement assisted by MAI/IPA solution post-treatment

机译:通过Mai / IPA解决方案辅助治疗方法通过材料质量改进进行钙钛矿太阳能电池的性能增强

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The quality of the perovskite layer plays a key role in the performance of perovskite solar cells (PSCs). In this work, we demonstrate a facile way to improve the quality of perovskite films by using a MAI/IPA solution to post-treat the perovskite material after the film formation. XRD, SEM and AFM show that an optimal, uniform, dense and highly crystalline perovskite film is achieved after the post-treatment. The transient photocurrent and transient photovoltage also confirm that the devices after the post-treatment have both the outstanding ability of charge extraction and suppressed charge recombination. By using the post-treatment, a maximum PCE of 19.08%, which is 12% higher than that of the control device, is obtained with a J(sc) of 23.12 mA cm(-2), a V-oc of 1.08 V and an FF of 76.03%. The results show that the MAI/IPA solution post-treatment after the perovskite film formation is a facile way to improve the film quality and the PSC performance.
机译:Perovskite层的质量在Perovskite太阳能电池(PSC)的性能方面发挥着关键作用。 在这项工作中,我们通过使用MAI / IPA解决方案来提高钙钛矿膜的质量来提高钙钛矿薄膜的质量。 XRD,SEM和AFM表明,在后处理后实现了最佳,均匀,致密,高度结晶的钙钛矿薄膜。 瞬态光电流和瞬态光电图也证实了后处理后的装置具有卓越的电荷提取能力和抑制电荷重组。 通过使用后处理,获得19.08%的最大PCE,其比控制装置的12%高,J(SC)为23.12 mA cm(-2),V-OC为1.08 V 和76.03%的FF。 结果表明,Mai / IPA解决方案在钙钛矿成膜后的后处理是改善薄膜质量和PSC性能的容易方式。

著录项

  • 来源
  • 作者单位

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Shaanxi Joint Key Lab Graphene Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

    Xidian Univ Wide Bandgap Semicond Technol Disciplines State K Sch Microelect Xian 710071 Shaanxi Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;无机化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号