Synthesis of aluminum nitride coatings assisted by fast argon atoms in a magnetron sputtering system with a separate input of argon and nitrogen

摘要

To increase the deposition rate of aluminum nitride coatings on dielectric substrates argon is supplied directly to the surface of a magnetron target and then flows into the process chamber through an accelerating grid. The input of nitrogen into the chamber through separate fittings allows formation near the substrate of a plasma suitable for the synthesis of aluminum nitride coatings. The content of nitrogen near the target and grid surfaces is much lower than near the substrate, which limits the dielectric film deposition on the target and grid. It enables an increase in the coating deposition rate by more than three times and a significant improvement of the coating structure and adhesion due to the growth in the energy of fast atoms bombarding the coating.