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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Interaction and Quantum Capacitance of Nitrogen/Sulfur Co-Doped Graphene: A Theoretical Calculation
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Interaction and Quantum Capacitance of Nitrogen/Sulfur Co-Doped Graphene: A Theoretical Calculation

机译:氮/硫共掺杂石墨烯的相互作用和量子电容:理论计算

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摘要

The interaction between different configurations of nitrogen and sulfur, as well as the influence on the quantum capacitance of N/S co-doped graphene. was investigated by applying density functional theory calculations. It was found that the sulfur atom tends to dislocate from the graphene plane in the presence of a pyrrolic-N atom. However, in the presence of pyridinic-N, the sulfur atom maintains its sp2 hybridization in both 6- and 5-membered rings. Moreover, at low concentration, sulfur doping produces a new state close to the Fermi level, which enhances the maximum quantum capacitance of the co-doped graphene up to 50%. Nevertheless, there is no further improvement when another nitrogen or sulfur atom was embedded into the co-doped graphene.
机译:氮气和硫的不同构型之间的相互作用,以及对N / S共掺杂石墨烯的量子电容的影响。 通过应用密度泛函理论计算来研究。 发现硫原子倾向于在吡咯的存在下从石墨烯平面脱臼。 然而,在吡啶-N的存在下,硫原子在6-和5元环中保持其SP2杂交。 此外,在低浓度下,硫掺杂产生靠近Fermi水平的新状态,这提高了共掺杂石墨烯的最大量子电容高达50%。 然而,当将另一个氮气或硫原子嵌入共掺杂的石墨烯时,尚不进一步改进。

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