Two-Stage Tunneling-Dominated Electrodeposition for Large-Scale Production of Ultralong Wavy Metal Microstructures on Native Oxide Layer-Passivated Si Electrode with Specific Surface Configuration

摘要

Wavy-shaped metallic materials play a significant role in various applications. The current synthesis strategy for such materials is limited to top-down thin metal film etching. Note that top-down etching is inevitable to process more surface dangling bonds than their bottom-up analogues and results in poor chemical stability. However, up to now, no bottom-up method has been presented to produce wavy-shaped metallic materials. Here, taking Cu as a model material, a bottom-up two-stage tunneling-dominated electrodeposition strategy is reported to produce ultralong Cu wavy microstructures (WMSs) on a lithographically patterned and native oxide layer-passivated Si electrode, where direct electron transfer is impeded. Scanning electron microscopy and field-emission scanning electron microscopy results demonstrate the large-scale production of Cu WMSs consisting of interconnected octahedral and cuboctahedral nanoparticles. The I-V curve suggests good electrical performance of the as-deposited Cu WMSs. Together with the inherent properties of the Cu material, for example, high thermal conductivity, high product selectivity for CO2 reduction reaction, and good biocompatibility, the distinctive structural characteristics of Cu WMSs ensure that they could be widely used in electronics, catalysis, and biotechnology. Moreover, it is reasonably expected that such a method can be efficacious for various metals including (but not limited to) silver, gold, and platinum.