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Analytical modelling of both parallel and cross grinding with arc-shaped wheel for grinding-induced damage and grinding force

机译:弧形轮磨削诱导损伤力和磨削力的平行和交叉磨削的分析模型

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摘要

The distribution of the undeformed chip thickness (UCT) in the wheel-workpiece contact area is important to analyze the grinding-induced damage and the grinding force on brittle materials. Cross grinding (CG) and parallel grinding (PG) are two basic modes in aspherical grinding. However, fewer researches provided the calculation of the UCT distribution in CG or toric PG. To solve this difficulty, the 3D geometry of the contact area is modelled and divided into small pieces. The UCT distributions are calculated based on the material removal rate in each divided area and revised based on the normal distribution of the grit protrusion height. Surface roughness (SR) and subsurface damage (SSD) can be estimated with the basic equations (i.e., the relationships between depth of median/lateral cracks and penetration depth). To verify the proposed method, the experimental results on BK7 glass by Sun et al. were re-analyzed. Through the comparison of the simulation and experimental results, the factor K-f for CG and PG, which represents the randomness of the UCT, was treated separately. Then, the damages generated by #400 arc-shaped wheel were analyzed, and two SiC-ceramic samples were ground. The results explained why CG showed worse surface quality than PG. Moreover, the normal forces in grinding SiC ceramic by #200 arc-shaped wheel were measured and analyzed. The force model, based on the assumption of specific grinding energy on the single grit, provided a better understanding of material removal mechanism.
机译:车轮工件接触区域中未变形芯片厚度(UCT)的分布对于分析脆性材料上的研磨造环和研磨力非常重要。交叉研磨(CG)和平行研磨(PG)是非非球面研磨的两个基本模式。然而,较少的研究提供了CG或TORIC PG中的UCT分布的计算。为了解决这个困难,接触区域的3D几何形状被建模并分成小块。基于每个分开区域中的材料去除率计算UCT分布,并根据砂砾突起高度的正常分布修改。表面粗糙度(SR)和地下损坏(SSD)可以用基本方程估计(即,中值/横向裂缝和穿透深度之间的关系之间的关系)。为了验证所提出的方法,Sun等人的BK7玻璃上的实验结果。重新分析。通过对模拟和实验结果的比较,分别处理CG和PG的因子K-F,其表示UCT的随机性。然后,分析了#400弧形轮产生的损坏,研磨两个SiC陶瓷样品。结果解释了为什么CG显示比PG更差的表面质量。此外,测量并分析了通过#200弧形轮研磨SiC陶瓷中的正常力。基于单个砂砾上的特定研磨能量的假设,力模型提供了更好地理解材料去除机制。

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