首页> 外文期刊>Polymer: The International Journal for the Science and Technology of Polymers >Morphological effects on dielectric properties of poly(vinylidene fluoride-co-hexafluoropropylene) blends and multilayer films
【24h】

Morphological effects on dielectric properties of poly(vinylidene fluoride-co-hexafluoropropylene) blends and multilayer films

机译:聚(偏二氟乙烯 - 六氟丙烯)共混物和多层薄膜介电性能的形态学作用

获取原文
获取原文并翻译 | 示例
           

摘要

Compared with chemical modification of ferroelectric poly (vinylidene fluoride) (PVDF) for electric energy storage, polymer blends, whether miscible or immiscible, represent a much easier approach to suppress the ferroelectricity of PVDF. In this study, we explored both miscible [i.e., poly (methyl methacrylate) or PMMA] and immiscible (i.e., polycarbonate or PC) blends with poly (VDF-co-hexafluoroethylene) [P(VDF-HFP)], as well as the PC/P(VDF-HFP) multilayer films. For miscible PMMA/P(VDF-HFP) blend films, the addition of PMMA significantly decreased the crystallinity of P(VDF-HFP). At a high PMMA content of ca. 40 wt%, the stretched PMMA/P(VDF-HFP) blend films started to exhibit the linear dielectric behavior with suppressed ferroelectricity. For the immiscible PC/P(VDF-HFP) blend films, a high PC content of 50 vol% was required to suppress the ferroelectricity in P(VDF-HFP). Instead, the PC/P(VDF-HFP) multilayer films started to show linear hysteresis loops when the content of P(VDF-HFP) was only 30 vol%. More importantly, the PC/P(VDF-HFP) multilayer films exhibited significantly higher breakdown strength than the blend films. This could be attributed to the perpendicular interfaces (with respect to the applied electric field), which serve as effective blocks for hot electrons injected from the metal electrodes to pass through the film. From this study, compared to conventional miscible and immiscible blends, multilayer films are promising for next generation film capacitors, aiming to achieve high temperature tolerance, high energy density, and low loss simultaneously.
机译:与铁电聚(偏二氟乙烯)(PVDF)的化学改性相比,用于电能储存,聚合物共混物,无论是混溶性还是不混溶,代表更容易抑制PVDF的铁电性的方法。在这项研究中,我们探讨了混溶性[即聚(甲基丙烯酸甲酯)或PMMA]和不混溶的(即聚碳酸酯或PC)与聚(VDF-共六氟乙烯)混合[P(VDF-HFP)],以及PC / P(VD​​F-HFP)多层薄膜。对于混溶PMMA / P(VD​​F-HFP)共混膜,PMMA的添加显着降低了P(VDF-HFP)的结晶度。在CA的高PMMA含量。 40wt%,拉伸的PMMA / P(VD​​F-HFP)共混膜开始表现出与抑制铁电性的线性介电行为。对于不混溶的PC / P(VD​​F-HFP)共混膜,需要高于50体积%的PC含量来抑制p(VDF-HFP)中的铁电。相反,当P(VDF-HFP)的含量仅为30体积%时,PC / P(VD​​F-HFP)多层膜开始显示线性滞后环。更重要的是,PC / P(VD​​F-HFP)多层膜显着比共混膜显着更高的击穿强度。这可以归因于垂直界面(关于所施加的电场),其用作从金属电极注入的热电子以通过薄膜的有效块。从本研究开始,与传统的混溶和不混溶的共混物相比,多层薄膜对下一代薄膜电容器有前途,旨在同时实现高温耐受性,高能量密度和低损耗。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号