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首页> 外文期刊>Physical review, B >Modulating superexchange strength to achieve robust ferromagnetic couplings in two-dimensional semiconductors
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Modulating superexchange strength to achieve robust ferromagnetic couplings in two-dimensional semiconductors

机译:调制超细的强度,实现二维半导体的鲁棒铁磁耦合

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摘要

Low-dimensional semiconducting ferromagnets have attracted considerable attention due to their promising applications as nanosize spintronics. However, realizing robust ferromagnetic couplings that can survive at high temperature is restrained by two decisive factors: superexchange couplings and anisotropy. Despite widely explored low-dimensional anisotropy, strengthening superexchange couplings has rarely been investigated. Here, we found that ligands with lower electronegativity can strengthen ferromagnetic superexchange couplings and further proposed the ligand modulation strategy to enhance the Curie temperature of low-dimensional ferromagnets. Based on the metallic CrX2 (X = S, Se, Te) family, substituting ligand atoms by halides can form stable semiconducting phase as CrSeCl, CrSeBr and CrTeBr. It is interesting to discover that, the nearest ferromagnetic superexchange couplings can be strengthened when substituting ligands from S to Se and Te. Such evolution originates from the enhanced electron hopping integral and reduced energy intervals between d and p orbitals, while the competing second nearest antiferromagnetic couplings are also benefitted due to delocalized p-p interactions. Finally, ligand modulation strategy is applied in other ferromagnetic monolayers, further verifying our theory and providing a fundamental understanding on controlling superexchange couplings in low dimension.
机译:由于纳米尺寸闪铜管,低维半导体铁磁体引起了相当大的关注。然而,实现能够在高温下存活的稳健的铁磁偶联在两个决定性因素中受到限制:超速耦合和各向异性。尽管广泛探索了低维各向异性,但很少已经研究了强化超速联轴器。这里,我们发现具有较低电负极的配体可以增强铁磁体超细耦合,并进一步提出了配体调制策略以提高低维铁磁体的居里温度。基于金属CRX2(X = S,SE,TE)系列,通过卤化物替代配体原子可以形成稳定的半导体相,作为CRSECL,CRSEBR和CRERBREBR。有趣的是,当从S到SE和TE的配体时,可以加强最近的铁磁超越联轴器。这种进化来自增强的电子跳跃积分和降低的D和P轨道之间的能量间隔,而竞争的第二最近的反铁磁耦合也是由于划分的P-P相互作用而受益。最后,配体调制策略应用于其他铁磁单层,进一步验证了我们的理论并提供了对控制低维层的超细耦合的基本理解。

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