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Anderson localization induced by gauge-invariant bond-sign disorder in square PbSe nanocrystal lattices

机译:Anderson定位在方形PBSE纳米晶晶格中的仪表 - 不变键障碍诱导

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摘要

We study theoretically the problem of electrons moving on a two-dimensional square lattice characterized by nearest-neighbor hopping terms of constant amplitude but random sign. The original motivation came from the discovery that this "bond-sign" disorder can be present in square lattices of epitaxially connected PbSe nanocrystals, which have been recently synthesized using colloidal routes. We investigate how this type of disorder tends to localize the electronic wave-functions and modifies the electronic structure. This is done via the calculation of the density-of-states, the participation ratio and the localization length. We show that, when the relative fraction p of negative signs increases from 0% to 50%, the effect of the disorder on the wave functions saturates at a constant level when p reaches values above similar to 25%. This behavior reveals that the true disorder experienced by the electrons is not the nominal disorder defined by p but a smaller part of it, which is irreducible due to frustrations. The amount of true disorder can be obtained by successive local gauge transformations as developed in the past to study models of spin glasses. In the thermodynamic limit, this irreducible gauge-invariant disorder induces localization of all electronic states, except at the center of the band where our calculations suggest that zero-energy states have a critical behavior. The particle-hole symmetry, which characterizes these disordered systems plays a crucial role in this behavior, as already found in lattices with random hopping or random magnetic flux, for example. In the case of lattices of PbSe nanocrystals, the effects of the bond-sign disorder are found to be weaker than those of more conventional types of disorder.
机译:我们从理论上研究电子移动在二维正方形格子特点是近邻跳跃恒定的幅度,但随机符号方面的问题。原动机从发现来,这种“键的符号”病症可以存在于正方形格子外延连接PbSe纳米晶体,已使用胶体路由被最近合成的。我们研究如何这类无序趋于本地化电子波函数和修改的电子结构。这是通过密度的状态中的计算中,参与比和本地化长度来完成。我们表明,当负号的增加相对p部分从0%至50%,在波函数饱和的障碍的在恒定水平的影响当p值达到类似于上述的25%。这种行为表明,由电子所经历的真正障碍是没有用p定义的名义障碍,但它的一小部分,这是挫折束缚所致。真正的障碍的量可以通过连续的局部规范变换为过去开发研究的自旋玻璃模型来获得。在热力学极限,所有的电子态的束缚这一规范不变紊乱诱发的定位,除了在带的中心,我们的计算表明,零能耗州有一个关键的行为。颗粒孔对称,其表征这些无序系统起着此行为的关键作用,如结合随机跳频或随机磁通量,例如格子已经找到。在PbSe纳米晶体的晶格的情况下,键的符号病症的效果被发现是比更常规的类型障碍的弱。

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  • 来源
    《Physical review, B》 |2018年第12期|共10页
  • 作者单位

    Univ Lille CNRS Cent Lille ISEN Univ Valenciennes UMR 8520 IEMN F-59000 Lille France;

    Univ Lille CNRS Cent Lille ISEN Univ Valenciennes UMR 8520 IEMN F-59000 Lille France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
  • 关键词

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