Ultrafast dynamics and subwavelength periodic structure formation following irradiation of GaAs with femtosecond laser pulses

摘要

A theoretical investigation of the ultrafast processes and dynamics of the excited carriers upon irradiation of GaAs with femtosecond pulsed lasers is performed in conditions that induce material damage and eventually surface modification of the heated solid. A parametric study is followed to correlate the produced transient carrier density with the damage threshold for various pulse duration values τ_p (it increases as ～τ _p~(0.053±0.011) at relatively small values of τ_p while it drops for pulse durations of the order of some picoseconds) based on the investigation of the fundamental multiscale physical processes following femtosecond laser irradiation. Moreover, fluence values for which the originally semiconducting material demonstrates a metallic behaviour are estimated. It is shown that a sufficient number of carriers in the conduction band are produced to excite surface-plasmon waves that upon coupling with the incident beam and a fluid-based surface modification mechanism lead to the formation of subwavelength periodic structures orientated perpendicularly to the laser beam polarization. Experimental results for the damage threshold and the frequencies of induced periodic structures show a good agreement with the theoretical predictions.