Prediction of the spin triplet two-electron quantum dots in Si: Towards controlled quantum simulations of magnetic systems

摘要

The ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multivalley materials like n-doped Si. Here we calculate numerically the spectrum of a two-electron Si quantum dot and show that the dot with the lateral size of several nm can have the spin triplet ground state which is impossible in the single-valley materials. Predicted singlet-triplet level crossing in two-electron Si quantum dots can potentially establish the platform for quantum simulation of magnetic many body systems based on quantum dots. We suggest several examples of such systems that open a way to controlled quantum simulations within the condensed matter setting.