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Topological Anderson insulator in electric circuits

机译:电路中的拓扑安德森绝缘体

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摘要

In this paper, we investigate the realization of topological Anderson insulators in electric circuits. A disordered Haldane model is constructed through electric circuit networks composed of capacitors and inductors, where the disorder is introduced through the random induction of the grounding inductors. Based on the noncommutative geometry method and transport calculations, we confirm that such kind of disorder can drive a phase transition from a normal insulator to a topological Anderson insulator. Besides, such a disorder also possesses unique characteristics which are absent for the usual Anderson disorder. Therefore distinct features are exhibited by the topological Anderson transition in electric circuits. Finally, the topological Anderson insulator in circuits holds additional advantages for microelectronic technology that can be easily detected by measuring the quantized transmission coefficients and the edge state wave functions.
机译:在本文中,我们调查了电路中拓扑安德森绝缘子的实现。 通过由电容器和电感器组成的电路网络构成无序的卤代模型,其中通过接地电感器的随机诱导引入无序。 基于非态度的几何方法和运输计算,我们确认这种紊乱可以驱动从正常绝缘体到拓扑安德森绝缘体的相位过渡。 此外,这种疾病还具有独特的特征,这些特征是通常的Anderson疾病。 因此,电路中的拓扑安德森过渡展出了不同的特征。 最后,电路中的拓扑安德森绝缘体具有通过测量量化传输系数和边缘状态波函数来容易检测的微电子技术的额外优点。

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