首页> 外文期刊>Physics Letters, A >Layer-by-layer assembly of Ag2S quantum dots-sensitized ZnO/SnO2 core-shell nanowire arrays for enhanced photocatalytic activity
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Layer-by-layer assembly of Ag2S quantum dots-sensitized ZnO/SnO2 core-shell nanowire arrays for enhanced photocatalytic activity

机译:AG2S量子点的层组装组件 - 敏化ZnO / SnO2核 - 壳纳米线阵列,用于增强的光催化活性

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摘要

Ag2S quantum dots-sensitized ZnO/SnO2 core-shell nanowire arrays were successfully synthesized layer by layer through hydrothermal growth, atomic layer deposition, and successive ionic layer adsorption and reaction process. By introducing the two-layer semiconductors, the bandgap of ZnO component in the arrays was slightly modulated, while the light absorption was obviously improved with an absorptivity higher than 95% in visible and ultraviolet range. In contrast to the ZnO NW arrays, the photocurrent response of the ZnO/SnO2/Ag2S NW arrays for the visible light was improved from 0.42 mu A to 22.5 mu A, and the photodegradation efficiency of methylene blue was increased from 45.24% to 71.61%, and 42.61% to 57.58%, respectively in visible light and ultraviolet light. Band structure analysis indicated that the coating layer brought different staggered gaps and suitable band alignment for efficient photocatalytic performance, which could be extended to design heterogeneous semiconductor nanomaterials for their potential applications. (C) 2020 Elsevier B.V. All rights reserved.
机译:AG2S量子点敏化ZnO / SnO2核壳纳米线阵列通过层通过水热生长,原子层沉积和连续的离子层吸附和反应过程成功地合成层。通过引入双层半导体,略微调节阵列中ZnO组分的带隙,而光吸收明显提高,吸收率高于可见和紫外线范围。与ZnO NW阵列相比,可见光ZnO / SnO2 / Ag2S NW阵列的光电流响应从0.42μma至22.5μm提高,亚甲基蓝的光降解效率从45.24%增加到71.61% ,42.61%至57.58%,分别以可见光和紫外线。带结构分析表明涂层带来了不同的交错间隙和合适的带对准,以便高效的光催化性能,这可以扩展到设计其潜在应用的非均相半导体纳米材料。 (c)2020 Elsevier B.v.保留所有权利。

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  • 来源
    《Physics Letters, A》 |2020年第26期|共8页
  • 作者单位

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Malaysia Sch Energy &

    Chem Engn Jalan Sunsuria Sepang 43900 Selangor Darul Malaysia;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

    Xiamen Univ Engn Res Ctr Micronano Optoelect Mat &

    Devices Minist Educ Dept Phys Shenzhen Res Inst Fujian Key Lab Semicond Mat &

    Applicat CI Ctr OSE Xiamen 361005 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理学;
  • 关键词

    Semiconductor; Heterojunction; Photocatalyst; Degradation; Band alignment;

    机译:半导体;异质结;光催化剂;劣化;带对齐;

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