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Influence of the Substrate and Precursor on the Magnetic and Magneto-transport Properties in Magnetite Films

机译:基质和前体对磁铁矿薄膜中磁性和磁性传输性能的影响

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摘要

We have investigated the magnetic and transport properties of nanoscaled Fe_3O_4 films obtained from Chemical Vapor Deposition (CVD) technique using [Fe~(II)Fe_2~(III)(OBu~t)_8] and [Fe_2~(III)OBu~t)_6] precursors. Samples were deposited on different substrates (i.e., MgO (001), MgAl_2O_4 (001) and Al_2O_3 (0001)) with thicknesses varying from 50 to 350 nm. Atomic Force Microscopy analysis indicated a granular nature of the samples, irrespective of the synthesis conditions (precursor and deposition temperature, T_(pre)) and substrate. Despite the similar morphology of the films, magnetic and transport properties were found to depend on the precursor used for deposition. Using [Fe~(II)Fe_2~(III)(OBu~t)_8] as precursor resulted in lower resistivity, higher M_s and a sharper magnetization decrease at the Verwey transition (Tv). The temperature dependence of resistivity was found to depend on the precursor and T_(pre). We found that the transport is dominated by the density of antiferromagnetic antiphase boundaries (AF-APB's) when [Fe~(II)Fe_2~(III)(OBu~t)_8] precursor and T_(pre) = 363 K are used. On the other hand, grain boundary-scattering seems to be the main mechanism when [Fe_2~(III)OBu~t)_6] is used. The Magnetoresistance (MR(H)) displayed an approximate linear behavior in the high field regime (H > 796 kA/m), with a maximum value at room-temperature of ~ 2-3% for H = 1592 kA/m, irrespective from the transport mechanism.
机译:我们研究了使用[Fe〜(II)Fe_2〜(III)(OBu〜t)_8]和[Fe_2〜(III)OBu〜t通过化学气相沉积(CVD)技术获得的纳米级Fe_3O_4薄膜的磁性和输运性质。 )_6]前体。将样品沉积在厚度为50至350 nm的不同衬底上(即MgO(001),MgAl_2O_4(001)和Al_2O_3(0001))。原子力显微镜分析表明,样品的颗粒性质与合成条件(前体和沉积温度,T_(pre))和底物无关。尽管膜的形态相似,但发现磁性和传输性能取决于沉积所用的前体。使用[Fe〜(II)Fe_2〜(III)(OBu〜t)_8]作为前驱体会导致较低的电阻率,较高的M_s和在Verwey跃迁(Tv)处更明显的磁化强度下降。发现电阻率的温度依赖性取决于前驱物和T_(pre)。我们发现,当使用[Fe〜(II)Fe_2〜(III)(OBu〜t)_8]前体和T_(pre)= 363 K时,反铁磁反相边界(AF-APB)的密度决定了传输。另一方面,当使用[Fe_2〜(III)OBu〜t)_6]时,晶界散射似乎是主要的机理。磁阻(MR(H))在高磁场条件下(H> 796 kA / m)表现出近似的线性行为,在室温下H = 1592 kA / m时的最大值约为2-3%。从运输机制。

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