Thermally excited quantum dot and energy transfer in thin films

摘要

Thermal transfer inside thin films with quantum-dot is considered. The Boltzmann equation is used to model the energy transport within the film when the quantum dot is thermally disturbed. Equivalent equilibrium temperature is introduced to evaluate the phonon intensity distribution inside the films. Time exponentially increasing temperature is incorporated inside the quantum dot to resemble the thermal disturbance inside the films. The wave dependent equation of phonon energy distribution is accommodated for the formulation of thermal transfer in the silicon and diamond thin films. A numerical code developed is validated through comparison of the thermal conductivity predicted and that obtained from the previous work. The findings show that film thermal conductivity data predicted is in good agreement with those reported in the previous study. Phonon intensity and temperature becomes high in the film around the quantum. Long wavelength phonons enhance phonon intensity distribution in the near region of the film edges; however, boundary scattering causes temperature jump in this region.