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机译:垂直边缘石墨层上恢复的金刚石(001)后高剂量离子注入和高温退火后
Graduate School of Science and EngineeringWaseda University3‐4‐1 Okubo Shinjuku Tokyo 169‐8555 Japan;
Toyota Motors Corporation1 Toyotacho Toyota Aichi 471‐0826 Japan;
Toyota Motors Corporation1 Toyotacho Toyota Aichi 471‐0826 Japan;
Toyota Motors Corporation1 Toyotacho Toyota Aichi 471‐0826 Japan;
Graduate School of Science and EngineeringWaseda University3‐4‐1 Okubo Shinjuku Tokyo 169‐8555 Japan;
Graduate School of Science and EngineeringWaseda University3‐4‐1 Okubo Shinjuku Tokyo 169‐8555 Japan;
Graduate School of Science and EngineeringWaseda University3‐4‐1 Okubo Shinjuku Tokyo 169‐8555 Japan;
Graduate School of Science and EngineeringWaseda University3‐4‐1 Okubo Shinjuku Tokyo 169‐8555 Japan;
annealing; carbon; diamond; graphite; ion implantation;
机译:回收金刚石上的垂直边缘石墨层(001)高剂量离子注入和高温退火后(物理。现实Solidi B 9/2017)
机译:使用FIB注入和高压高温退火在金刚石中制造石墨层
机译:在高剂量植入和热退火后在Si(001)层中形成的氦气泡沫
机译:使用高温石墨封顶退火技术从4H-SiC中的P型注入层实现低薄层电阻
机译:从材料到设备:(I)具有可生物降解牺牲层的超薄柔性可植入生物探针(II)金刚石的自旋注入和运输
机译:作为Ge金字塔形成的控制因素的动力学极限的证据:室温下接着600°C退火的Ge沉积形成的Ge / Si(001)润湿层的结构特征的研究
机译:回收金刚石上的垂直边缘石墨层(001)高剂量离子注入和高温退火后(物理。现实Solidi B 9/2017)