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Zn2GeO4-x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen evolution: interface roughness and defect engineering

机译:Zn2GeO4-X / ZnS杂交通过原位蚀刻硫化硫化,用于不含PT的光催化氢气进化:界面粗糙度和缺陷工程

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Interface engineering has been regarded as a promising strategy for enhancing the catalytic activities of heterojunction photocatalysts. Herein, we have adopted an in situ etching sulfurization method to construct a Zn2GeO4-x/ZnS intimate heterojunction, which exhibited excellent photocatalytic H-2 production in the absence of a Pt co-catalyst. Distinctively, TEM and HRTEM measurements showed that the interface of the Zn2GeO4-x/ZnS heterojunction became rough (topologically) due to in situ etching sulfurization, and etching was found to be strongly dependent on the crystal orientation. Moreover, the surface of the Zn2GeO4 nanorods from flat (100) planes evolved into an irregular coastline-like structure topologized with (110) and (113) high-index planes. ICP and elemental distribution measurements indicated that during the precipitation of ZnS via in situ etching sulfurization, the migration and dissolution of Zn and Ge ions on the Zn2GeO4(100) plane led to the roughening of the interface and the evolution of crystal planes. XPS and EPR analyses showed that Zn2GeO4-x/ZnS contained more oxygen vacancies with structural evolution. The theoretical calculations demonstrated that oxygen defects were prone to be generated on the Zn2GeO4(113) plane and formed the Ge-3c(3+)-V-O complexes. Compared to the inactive (100) plane, etching caused the Zn2GeO4(110) planes to have a higher number of threefold coordinated germanium (Ge-3c(4+)) and (113) high-index planes that possessed abundant active sites (Ge-3c(3+)-V-O complexes), which dramatically decreased the barrier and reaction energy of H2O dissociation. This work not only provides fundamental insights into the topological interface evolution and facet-dependent defect distribution but also offers a strategy for the design of efficient photocatalysts for H-2 production without the use of Pt as a co-catalyst based on a multifunctional interface.
机译:界面工程被认为是提高异质结光催化剂的催化活性的有希望的策略。在此,我们采用了原位蚀刻硫化方法,以构建Zn2GeO 4-X / ZnS的静脉杂交,其在不存在Pt助催化剂的情况下表现出优异的光催化H-2产生。显着的,TEM和HRTEM测量结果表明,由于原位蚀刻硫化,Zn2GeO4-X / ZnS异质结的界面变得粗糙(拓扑),并且发现蚀刻强烈地取决于晶体取向。此外,来自扁平(100)平面的Zn2GeO4纳米棒的表面演变成具有(110)和(113)高折射率平面的不规则海岸线结构。 ICP和元素分布测量表明,在原位蚀刻硫沉淀过程中,Zn2GeO4(100)平面上的Zn和Ge离子的迁移和溶解导致界面的粗糙度和晶体平面的演变。 XPS和EPR分析表明,Zn2GeO4-X / Zns包含具有结构演进的更多氧空位。理论计算证明,在Zn 2Ge4(113)平面上易于产生氧缺陷,并形成GE-3C(3 +) - V-O配合物。与非活动(100)平面相比,蚀刻导致Zn2GeO4(110)平面具有更高数量的三倍协调锗(GE-3C(4 +))和(113)具有丰富的活性位点的高指数平面(GE -3C(3 +) - vo复合物),显着降低了H2O解离的屏障和反应能量。这项工作不仅为拓扑界面演变和方面依赖性缺陷分布提供了根本性的见解,而且还提供了一种在不使用基于多功能界面的助催化剂作为助催化剂的H-2生产的高效光催化剂的策略。

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