...
机译:一种新的SiO单层,具有负泊松比和DIRAC半型特性
Henan Univ Sci &
Technol Sch Phys &
Engn Henan Key Lab Photoelect Energy Storage Mat &
App Luoyang 471023 Peoples R China;
Chem &
Chem Engn Guangdong Lab Shantou 515031 Peoples R China;
Southwest Jiaotong Univ Sch Phys Sci &
Technol Key Lab Adv Technol Mat Minist Educ China Chengdu 610031 Peoples R China;
Henan Univ Sci &
Technol Sch Phys &
Engn Henan Key Lab Photoelect Energy Storage Mat &
App Luoyang 471023 Peoples R China;
Southwest Jiaotong Univ Sch Phys Sci &
Technol Key Lab Adv Technol Mat Minist Educ China Chengdu 610031 Peoples R China;
Henan Univ Sci &
Technol Sch Phys &
Engn Henan Key Lab Photoelect Energy Storage Mat &
App Luoyang 471023 Peoples R China;
机译:一种新的SiO单层,具有负泊松比和DIRAC半型特性
机译:预测具有超快迪拉克传输通道和电子轨道控制负泊松比的新型2D MB2(M = TI,HF,V,NB,TA)单层
机译:拉伸应变对C_4N_3H单层的影响:大泊松比和鲁棒的狄拉克锥
机译:负泊松比例聚氨酯泡沫的制备和力学性能研究
机译:具有负泊松比和负热膨胀的可编程机械超材料
机译:具有准平面五配位碳和负泊松比的半金属Be5C2单层整体最小值
机译:预测具有超快迪拉克传输通道和电子轨道控制负泊松比的新型2D MB2(M = TI,HF,V,NB,TA)单层
机译:半金属Be5C2单层全局最小值,具有准平面五价碳和负极化率(Open access publisher版本)。