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首页> 外文期刊>Synthetic Metals >Molecular design of D-pi-D-typed hole-transporting materials for perovskite solar cells based on the pi-conjugated cores
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Molecular design of D-pi-D-typed hole-transporting materials for perovskite solar cells based on the pi-conjugated cores

机译:基于PI缀合的核心钙钛矿太阳能电池的D-PI-D型孔输送材料的分子设计

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摘要

The performances of four new D-pi-D-typed hole-transporting materials (HTMs) with big n-conjugated linkers are simulated with density functional theory and the Marcus hopping model. Our results show that the highest occupied molecular orbital (HOMO) levels of new designed HTMs range from - 5.22 to -5.39 eV, which presents a suitable energy alignment with the valence band of perovskite. Meanwhile, due to the strong electronic coupling between adjacent molecules and delocalized frontier molecular orbitals, the high hole mobilities are also obtained for these molecules with values of 1.03 x 10(-1) cm(2) v(-1) s(-1) (L1), 3.67 x 10(-2) cm(2) v(-1) s(-1) (L2), 1.05 x 10(-2) cm(2) v(-1) s(-1) (L3), and 3.66 x 10(-1) cm(2) v(-1) s(-1) (L4), respectively. Moreover, the weak absorption in visible light region and the large Stokes shifts will be also helpful to improve the performance of HTMs. In summary, the calculated results indicate that these new designed molecules with polycyclic n-conjugated cores could become potential HTM candidates to help create more efficient solar cells.
机译:的四个新的d-π-d类型的空穴传输材料(HTMS)大π共轭接头的性能进行了仿真与密度泛函理论和马库斯跳频模型。我们的研究结果表明,最高占据新的设计HTMS分子轨道(HOMO)水平为 - 5.22至-5.39电子伏特,这提出了与钙钛矿的价带合适的能量对准。同时,由于相邻分子和离域前沿分子轨道之间的强电子耦合,也得到高的空穴迁移率对于这些分子具有1.03×10(-1)厘米的值(2)V(-1)S(-1 )(L1),3.67×10(-2)厘米(2)v(-1)S(-1)(L2),1.05×10(-2)厘米(2)v(-1)S(-1 )(L3),和3.66×10(-1)厘米(2)v(-1)S(-1)(L4),分别。此外,在可见光区域的弱吸收和大斯托克斯位移也将有助于提高HTMS的性能。总之,计算结果表明,与多环π共轭内核这些新设计的分子可能成为潜在的HTM考生帮助创造更多的高效太阳能电池。

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