The effect of Al and In concentrations on the properties of electrodeposited Cu(In,Al)Se-2 using two electrode system without the addition of complexing agents

摘要

Chalcopyrite Cu(In,Al)Se-2 thin films were deposited by electrodeposition process onto ITO coated glass substrates from de-ionized water solution consisting of CuCl2, InCl3, AlCl3 and SeO2 precursors. The effect of Al and In concentrations in precursor solutions on the properties of Cu(In,Al)Se-2 films were investigated by varing x ratio (x = [Al]/[In + Al]) from O to 0.75. The structural, optical and electrical properties of films were studied, respectively, using X-ray diffraction, Raman spectroscopy, UV-visible spectrophotometer, Hall-effect and four-point probe method. The X-ray diffraction analysis proved that the film deposited at x = 0.75 present Cu(In,Al)Se-2 single phase in its chalcopyrite structure and with preferred orientation along [112] direction, however the others films show the main Cu(In,Al)Se-2 chalcopyrite with the formation of In2Se3 as a secondary phase.