Structural, electronic and optical properties of transition metal doped Hf 1-x TM x O 2 (TM = Co, Ni and Zn) using modi fied TB-mBJ potential for optoelectronic memristors devices

著录项

• 来源
  《Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic》 |2020年第2020期|共10页
• 作者

  Khera Ejaz Ahmad; Ullah Hafeez; Imran Muhammad; Niaz N. A.; Hussain Fayyaz; Khalil R. M. Arif; Rasheed Umbreen; Sattar M. Atif; Iqbal Fasial; Mahta Chandreswar; Rana Anwar Manzoor; Kim Sungjun;

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• 作者单位

  Islamia Univ Bahawalpur Dept Phys Bahawalpur Pakistan;

  Islamia Univ Bahawalpur Dept Phys Bahawalpur Pakistan;

  Govt Coll Univ Faisalabad Dept Phys Faisalabad 38000 Pakistan;

  Bahauddin Zakariya Univ Dept Phys Mat Simulat Res Lab MSRL Multan 60800 Pakistan;

  Bahauddin Zakariya Univ Dept Phys Mat Simulat Res Lab MSRL Multan 60800 Pakistan;

  Bahauddin Zakariya Univ Dept Phys Mat Simulat Res Lab MSRL Multan 60800 Pakistan;

  Bahauddin Zakariya Univ Dept Phys Mat Simulat Res Lab MSRL Multan 60800 Pakistan;

  United Arab Emirates Univ Coll Sci Dept Phys Al Ain U Arab Emirates;

  Islamia Univ Bahawalpur Dept Phys Bahawalpur Pakistan;

  Chungbuk Natl Univ Sch Elect Engn Cheongju 28644 South Korea;

  Bahauddin Zakariya Univ Dept Phys Mat Simulat Res Lab MSRL Multan 60800 Pakistan;

  Dongguk Univ Div Elect &

  Elect Engn Seoul South Korea;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类 光学;
• 关键词