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L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithography

机译:具有高方向性和低反射率的L形纤维芯片光栅耦合器,用深紫色光刻制造

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摘要

Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling to sub-micron silicon-oninsulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high coupling efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for the first time, to the best of our knowledge, the realization of an ultra-directional L-shaped grating coupler, seamlessly fabricated by using 193 nm deep-ultraviolet (deep-UV) lithography. We also include a subwavelength index engineered waveguide-to-grating transition that provides an eight-fold reduction of the grating reflectivity, down to 1% (-20 dB). A measured coupling efficiency of -2.7 dB (54%) is achieved, with a bandwidth of 62 nm. These results open promising prospects for the implementation of efficient, robust, and cost-effective coupling interfaces for sub-micrometric SOI waveguides, as desired for large-volume applications in silicon photonics. (C) 2017 Optical Society of America
机译:光栅耦合器通过光纤实现硅芯片的位置友好地接口。传统的耦合器设计在相对复杂的架构上呼叫,以提供与子微米硅 - onInsulator(SOI)波导的有效光耦合。相反,双蚀刻光栅中的燃烧效果提供了高耦合效率,制造复杂性降低。在这封信中,我们首次展示,据我们所知,实现超方向L形光栅耦合器,通过使用193nm深紫外(深紫外线)光刻无缝制造。我们还包括亚波长指数的工程化波导到光栅转变,其降低光栅反射率降低八倍,下降至1%(-20dB)。实现了-2.7dB(54%)的测量耦合效率,带宽为62nm。这些结果开放了对硅光子中的大容量应用的需要实施用于亚微米SOI波导的有效,稳健和性价比耦合界面的前景。 (c)2017年光学学会

著录项

  • 来源
    《Optics Letters》 |2017年第17期|共4页
  • 作者单位

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    STMicroelectronics SAS TR&

    D 850 Rue Jean Monnet F-38920 Crolles France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

    Natl Res Council Canada 1200 Montreal Rd Ottawa ON K1A 0R6 Canada;

    STMicroelectronics SAS TR&

    D 850 Rue Jean Monnet F-38920 Crolles France;

    STMicroelectronics SAS TR&

    D 850 Rue Jean Monnet F-38920 Crolles France;

    Univ Paris Saclay Univ Paris Sud Orsay C2N Ctr Nanosci &

    Nanotechnol CNRS F-91405 Orsay France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
  • 关键词

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