Silicon nitride waveguide as a power delivery component for on-chip dielectric laser accelerators

摘要

We study the weakly guided silicon nitride waveguide as an on-chip power delivery solution for dielectric laser accelerators (DLAs). We focus on the two main limiting factors on the waveguide network for DLAs: the optical damage and nonlinear characteristics. The typical delivered fluence at the onset of optical damage is measured to be similar to 0.19 J/cm(2) at a 2 mu m central wavelength and 250 fs pulse width. This damage fluence is lower than that of the bulk Si3N4 (similar to 0.65 J/cm(2)), but higher than that of bulk silicon (similar to 0.17 J/cm(2)). We also report the nonlinearity-induced spectrum and phase variance of the output pulse at this pulse duration. We find that a total waveguide length within 3 mm is sufficient to avoid significant self-phase modulation effects when operating slightly below the damage threshold. We also estimate that one SiNx waveguide can power 70 mu m silicon dual pillar DLAs from a single side, based on the results from the recent free-space DLA experiment. (C) 2019 Optical Society of America