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首页> 外文期刊>Optics Letters >Electro- and photon-induced cooling in BNT-BT-SBET relaxors with in situ optica temperature sensing
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Electro- and photon-induced cooling in BNT-BT-SBET relaxors with in situ optica temperature sensing

机译:BNT-BT-SBET松弛的电气和光子诱导的冷却,具有原位Optica温度感测

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摘要

A novel lead-free luminescent ferroelectric (FE) ceramic, Bi0.5Na0.5TiO3-0.06 BaTiO3-0.055 Sr0.7Bi0.18Er0.02 square 0.1TiO3 (BNT-BT-SBET), is developed with an adiabatic temperature change (Delta T) of 0.7 K under an electric field (E) of 60 kV/cm at room temperature, an anti-Stokes fluorescence cooling, and a maximum optical Tsensitivity of 0.0055 K-1 at 522 K. Interestingly, the electrocaloric response reaches a saturation at permittivity shoulder T of 100 degrees C; meanwhile, the maximized emission intensity of H-2(11/2) -> I-4(15/2) occurs. T- and E-tunable enhancement of H-2(11/2) -> I-4(15/2) emission intensity is due to the population inversion from the (4)S(3/2 )to H-2(11/2) states caused by an incoherent regime consisting of FE phase and polar nanoregions in a relaxor matrix. (C) 2020 Optical Society of America
机译:一种新型无铅发光铁电(Fe)陶瓷,Bi0.5Na0.5TiO3-0.06 Batio3-0.055 Sr0.7bi0.18er0.02方形0.1tio3(BNT-BT-SBET),具有绝热温度变化(Delta T. 在室温下60kV / cm的电场(e)的电场(e)下的0.7k,抗箭头荧光冷却,以及522k的最大光学倍率为0.0055k-1。有趣的是,电热量应答达到饱和 允许100摄氏度的肩部T; 同时,发生H-2(11/2) - > I-4(15/2)的最大化发射强度。 H-2(11/2) - > I-4(15/2)发射强度的T-和电子可调增强是由于(4)S(3/2)到H-2( 11/2)由一种不连贯的制度引起的状态,该方案由Solector基质中的Fe相和极性纳米导致组成。 (c)2020美国光学学会

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