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Scattered field from a dielectric-topological insulator rough interface using perturbation theory

机译:从介电拓扑绝缘体粗糙界面采用扰动理论的散射场

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摘要

Scattering from a dielectric-topological insulator (TI) rough interface is studied using perturbation theory (PT). Two models characterized by magneto-electric pseudo scalar Psi and surface admittance gamma for TI material are incorporated in the analysis. The zeroth order solution describes the reflection and transmission properties of the flat TI interface. Results are reported for various values of Psi and gamma. The Brewster angle is shifted while it occurs at 58 degrees for the dielectric case. The cross polarized reflection coefficients become small as the value of gamma is increased. The first order scattering coefficients represent the contribution by superimposed roughness on the flat interface. Numerical results show that for gamma-model, the first order co-polarized scattered field increases as gamma is increased while the cross polarized field decreases. It is noted that the model defined by gamma can better describe the scattering properties of the TI rough interface both theoretically and practically.
机译:使用扰动理论(PT)研究了从介电拓扑绝缘体(TI)粗糙界面的散射。在分析中结合了两种型号,其特征在于磁电伪标量PSI和用于Ti材料的表面导纳γ。 Zeroth订单解决方案描述了扁平Ti接口的反射和传输特性。据报道了PSI和伽马的各种值。在介电壳体以58度发生58度的同时移动刮损角。随着伽马的值增加,交叉偏振反射系数变小。第一阶散射系数表示通过平面界面上的叠加粗糙度的贡献。数值结果表明,对于伽马模型,在交叉偏振场降低时,第一阶协调散射场随着伽马增加而增加。应注意,由伽马定义的模型可以更好地描述Ti粗糙接口的散射特性,理论上和实际情况。

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