Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

摘要

Monolayer pentagonal silicon dicarbide is a 2D material composed entirely of pentagons, and it possesses novel electronic properties possibly leading to many potential applications. In this paper, using first-principles calculations, we have systematically investigated the electronic, mechanical and transport properties of monolayer penta-SiC2 by strain-engineering. By applying in-plane tensile or compressive strain, it is possible to modulate the physical properties of monolayer penta-SiC2, which subsequently changes the transport behaviour of the carriers. More interestingly, at room temperature, the uniaxial compressive strain of -8% along the a-direction can enhance the hole mobility of monolayer penta-SiC2 along the b-direction by almost three orders of magnitude up to 1.14 x 10(6) cm(2) V-1 s(-1), which is much larger than that of graphene, while similar strains have little influence on the electron mobility. The ultrahigh and strain-modulated carrier mobility in monolayer penta-SiC2 may lead to many novel applications in high-performance electronic and optoelectronic devices.