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Ultra-thin ZnO film as an electron transport layer for realizing the high efficiency of organic solar cells

机译:超薄ZnO膜作为电子传输层,用于实现有机太阳能电池的高效率

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摘要

To overcome the limits of low charge transport efficiency and high absorption in the UV region of conventional thick ZnO layers in organic solar cells, herein we introduce an ultra-thin ZnO film (4 nm) into PBDTTT-CF: PC70BM bulk heterojunction organic solar cells, as the electron transport layer, and realize a power conversion efficiency of 7.51%, which is dramatically higher than that of a device using general ZnO film (28.1 nm). Various techniques from both steady-state and ultra-fast views reveal that the devices with an ultra-thin ZnO film (less than 10 nm) show a higher built-in potential compared to the device with a 28.1 nm ZnO film. Such an enhancement of the built-in potential could facilitate the photo-generated excitons dissociating into free charge carriers and benefit the transport of charge carriers to the electrode. Thus, we have supplied an efficient electron conducting layer not only for the photovoltaic community but also for other photoelectronic devices.
机译:为了克服有机太阳能电池中常规厚ZnO层的常规厚ZnO层的UV区低电荷传输效率和高吸收的限制,在本文中,我们将超薄ZnO膜(4nm)引入PBDTTT-CF:PC70BM散装异质结有机太阳能电池 作为电子传输层,并实现了7.51%的功率转换效率,其显着高于使用一般ZnO膜(28.1nm)的装置的效率。 来自稳态和超快速视图的各种技术表明,与具有28.1nm ZnO膜的器件相比,具有超薄ZnO膜(小于10nm)的装置显示出更高的内置电位。 这种内置电位的这种增强可以促进将光产生的激子分开到自由电荷载流子中,并使电荷载体传送到电极。 因此,我们已经提供了一种不适用于光伏群落的有效电子导电层,而且还提供了其他光电装置。

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  • 来源
    《RSC Advances》 |2017年第24期|共7页
  • 作者单位

    Zhejiang Normal Univ Dept Phys Jinhua 321004 Zhejiang Peoples R China;

    Zhejiang Normal Univ Dept Phys Jinhua 321004 Zhejiang Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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