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The deviations of evaporation modes in two different morphologies of 2D WS2 film

机译:蒸发模式在2D WS2薄膜两种不同形态中的偏差

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摘要

Exploring the inverse process of materials growth, evaporation of atoms from the material, is a crucial method to investigate the physical properties of two dimensional (2D) nanomaterials. Here, the evaporation modes of two different morphologies of 2D WS2 film, stacked film and normal film, were investigated by thermal annealing. It is found that the atomic evaporation rate increases and the crystallinity deteriorates when annealing temperature rises. During the evaporation process, atom evaporation firstly starts from the boundaries and defects. The evaporation rate is proportional to the free energy of S and W atoms, and inversely proportional to the local S-W atomic concentration. There is a striking difference in the evaporation modes between stacked film and normal film; layer-by-layer peeling off the surface only appears in normal film. These results imply that the interlayer coupling strength of stacked film is greater than that of the normal film with uniform thickness.
机译:探索材料生长的逆过程,蒸发来自材料的原子,是研究二维(2D)纳米材料的物理性质的重要方法。 这里,通过热退火研究了2D WS2膜,堆叠膜和正常膜的两个不同形态的蒸发模式。 发现原子蒸发速率增加,结晶度在退火温度上升时劣化。 在蒸发过程中,原子蒸发首先从边界和缺陷开始。 蒸发速率与S和W原子的自由能成比例,并且与局部S-W原子浓度成反比。 堆叠膜和正常膜之间的蒸发模式存在着惊显的差异; 逐层剥离表面仅出现在正常膜中。 这些结果暗示堆叠膜的层间耦合强度大于具有均匀厚度的正常膜的强度。

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    《RSC Advances》 |2019年第46期|共8页
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  • 正文语种 eng
  • 中图分类 化学;
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