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Preparation of large-area ultrathin carbon semiconductors converted from conjugated microporous polymer films

机译:从共轭微孔聚合物薄膜转换的大面积超碳半导体的制备

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摘要

Two-dimensional carbon semiconductors have aroused great attention due to their unique structures and novel properties, showing potential applications in emerging electronic and optoelectronic devices. In this work, we reported an effective strategy to controllable prepare ultrathin carbon nanofilms (CNFs) by combining in situ-growth and stepwise thermal annealing, with the features of large-area, tunable properties and nanoscale thickness. The structures, morphologies and electrical properties of these as-prepared CNFs were characterized systematically. Impressively, tunable electrical properties from low to semi- and high conductivity could be precisely achieved through stepwise annealing of conjugated microporous polymer films. By introducing CNF-750 as the active channel layer, the transistor exhibited a typical p-type semiconductor property. Moreover, by further coupling CNF-750 with carbon dots (CDs) as a photoresponse layer, the as-fabricated all-carbon diode based on CDs/CNF-750 heterostructure film showed high ultraviolet (UV) light response.
机译:由于其独特的结构和新颖性质,二维碳半导体引起了很大的关注,在新兴电子和光电器件中显示出潜在的应用。在这项工作中,我们报道了通过以原位 - 生长和逐步的热退火组合,具有大面积,可调谐性和纳米级厚度的特征来控制制备超薄碳纳米岩(CNF)的有效策略。系统的结构,形态和电性能系统的特征。令人印象深,可以通过逐步退火来精确地实现来自低至半导体和高导电性的可调谐电性能。通过将CNF-750引入作为有源通道层,晶体管表现出典型的p型半导体特性。此外,通过将CNF-750进一步与碳点(CD)作为光源介调层,基于CDS / CNF-750异质结构膜的AS制造的全碳二极管显示出高紫外(UV)光响应。

著录项

  • 来源
    《RSC Advances》 |2019年第30期|共6页
  • 作者单位

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ NanjingTech IAM KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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