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Oxygen vacancy regulation in Nb-doped Bi2WO6 for enhanced visible light photocatalytic activity

机译:NB掺杂Bi2WO6中的氧空位调节,用于增强可见光光催化活性

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摘要

Novel Nb-doped Bi2WO6 nanosheets have been successfully synthesized by a simple hydrothermal method. XRD, Raman spectra, XPS and SEM were adopted to analyze the structure and morphology of the samples, then the structure-dependent optical properties, photoelectric behavior and photocatalytic activities were investigated, and the structure-property relationship was also discussed. The results show that doping Nb5+ can increase the oxygen vacancies in the Bi2WO6 lattice and reduce the optical band gap of Bi2WO6. The oxygen vacancies also act as electron traps, which promote the separation of photogenerated carriers. Hence, compared with the pure Bi2WO6, the as-prepared Nb-doped Bi2WO6 nanosheets exhibit enhanced visible-light photocatalytic activity for removing contaminants in water such as rhodamine B and tetracycline.
机译:通过简单的水热法成功地合成了新的NB掺杂Bi2WO6纳米片。 采用XRD,拉曼光谱,XPS和SEM分析样品的结构和形态,然后研究了结构依赖性光学性质,光电行为和光催化活性,并讨论了结构性质关系。 结果表明,掺杂NB5 +可以增加BI2WO6格子中的氧空位,并降低Bi2WO6的光学带隙。 氧气空位也充当电子疏水阀,其促进了光生载体的分离。 因此,与纯BI2WO6相比,AS制备的Nb掺杂的Bi2wo6纳米片具有增强的可见光光催化活性,用于去除水中的污染物如罗丹明B和四环素。

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  • 来源
    《RSC Advances》 |2019年第39期|共8页
  • 作者单位

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Zhejiang California Int NanoSyst Inst Hangzhou 310058 Zhejiang Peoples R China;

    Zhejiang Univ State Key Lab Silicon Mat Sch Mat Sci &

    Engn Hangzhou 310027 Zhejiang Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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