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机译:增强的垂直和平面螺旋MOS2纳米片的二次和三次谐波代
Michigan Technol Univ Dept Phys Houghton MI 49931 USA;
Michigan Technol Univ Dept Phys Houghton MI 49931 USA;
Michigan Technol Univ Dept Phys Houghton MI 49931 USA;
Michigan Technol Univ Dept Phys Houghton MI 49931 USA;
Michigan Technol Univ Dept Mech Engn Engn Mech Houghton MI 49931 USA;
Michigan Technol Univ Dept Mech Engn Engn Mech Houghton MI 49931 USA;
Michigan Technol Univ Dept Phys Houghton MI 49931 USA;
Michigan Technol Univ Dept Phys Houghton MI 49931 USA;
molybdenum disulfide (MoS2); vertical nanosheets; spiral nanostructures; chemical vapor deposition; second harmonic generation; third harmonic generation;
机译:增强的垂直和平面螺旋MOS2纳米片的二次和三次谐波代
机译:几层MXENE基垂直对齐MOS2纳米型纳米型混合尺寸异质结构,提高超级电容器性能
机译:增强氢气退火垂直MOS2纳米液的氢进化反应活性
机译:亚衍射平面二维光子晶体中垂直约束相位匹配二次谐波的产生
机译:光子带隙增强了平面铌酸锂波导中的二次谐波产生。
机译:从氮化硼型型旋转界面和垂直超晶格中增强可调谐的第二次谐波产生
机译:增强氢气退火垂直MOS2纳米液的氢进化反应活性