机译:选择性地生长SiGE翅片结构中各向异性应变松弛的观察与理解
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
Bruker Semicond Div Belmont Business Pk Durham DH1 1TW England;
Bruker Semicond Div 112 Robin Hill Rd Santa Barbara CA 93117 USA;
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
IMEC Kapeldreef 75 B-3001 Leuven Belgium;
FinFET; heteroepitaxy; strain; HRXRD; relaxation; defects;
机译:选择性地生长SiGE翅片结构中各向异性应变松弛的观察与理解
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机译:纳米断层扫描技术在坑式Si(001)衬底上生长的SiGe岛中的合金化和应变松弛
机译:纳米断层扫描技术在坑式Si(001)衬底上生长的SiGe岛中的合金化和应变松弛
机译:siGe / si异质结构上siGe的选择性刻蚀