Laser annealing towards high-performance monolayer MoS2 and WSe2 field effect transistors

摘要

The transition metal dichalcogenides (TMDCs) have been intensively investigated as promising nanoelectronic and optoelectronic materials. However, the pervasive adsorbates on the surfaces of monolayer TMDCs, including oxygen and water molecules from the ambient environment, tend to degrade the device performance, thus hindering specific applications. In this work, we report the effect of laser irradiation on the transport and photoresponse of monolayer MoS2 and WSe2 devices, and this laser annealing process is demonstrated as a straightforward approach to remove physically adsorbed contaminants. Compared to vacuum pumping and in situ thermal annealing treatments, the field-effect transistors after laser annealing show a more than one order of magnitude higher on-state current, and no apparent degradation of device performance at low temperatures. The mobility of the monolayer WSe2 devices can be enhanced by three to four times, and for single-layered MoS2 devices with the commonly used SiO2 as the back-gate, the mobility increases by 20 times, reaching 37cm2V-1s-1