Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory

摘要

The unique forming-free feature of Si-based resistive switching memory plays a key role in the industrialization of next generation memory in the nanoscale. Here we report on a new forming-free nanocrystalline-Si: H (nc-Si: H)/SiNx:H resistive switching memory that can be obtained by deposition of hydrogen diluted nc-Si on hydrogen plasma treated a-SiNx: H layer. It is found that nc-Si dots with areal density of 5.6. x. 10(12)/cm(2) exist in nc-Si: H sublayer. Si dangling bonds (DBs) of volume density of 4.13 x 10(23) cm(-3) are produced in the a-SiNx:H sublayer.