首页> 外文期刊>Nanotechnology >Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications
【24h】

Formation mechanisms of ZnO nanowires on polycrystalline Au seed layers for piezoelectric applications

机译:ZnO纳米线对压电应用多晶Au种子层的形成机制

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

ZnO nanowires are considered as attractive building blocks for piezoelectric devices, including nano-generators and stress/strain sensors. However, their integration requires the use of metallic seed layers, on top of which the formation mechanisms of ZnO nanowires by chemical bath deposition are still largely open. In order to tackle that issue, the nucleation and growth mechanisms of ZnO nanowires on top of Au seed layers with a thickness in the range of 5-100 nm are thoroughly investigated. We show that the ZnO nanowires present two different populations of nano-objects with a given morphology. The majority primary population is made of vertically aligned ZnO nanowires, which are heteroepitaxially formed on top of the Au (111) grains. The resulting epitaxial strain is found to be completely relieved at the Au/ZnO interface. In contrast, the minority secondary population is composed of ZnO nanowires with a significant mean tilt angle around 20 degrees with respect to the normal to the substrate surface, which are presumably formed on the (211) facets of the Au (111) grains. The elongation of ZnO nanowires is further found to be limited by the surface reaction at the c-plane top facet in the investigated conditions. By implementing the selective area growth using electron beam lithography, the position of ZnO nanowires is controlled, but the two populations still co-exist in the ensemble. These findings provide an in-depth understanding of the formation mechanisms of ZnO nanowires on metallic seed layers, which should be taken into account for their more efficient integration into piezoelectric devices.
机译:ZnO纳米线被认为是压电装置的有吸引力的构建块,包括纳米发生器和应力/应变传感器。然而,它们的整合需要使用金属种子层,首先,通过化学浴沉积的ZnO纳米线的形成机制仍然很大程度上是开放的。为了解决该问题,彻底研究了厚度在5-100nm范围内的厚度的ZnO纳米线上的成核和生长机制。我们表明,ZnO纳米线在具有给定的形态学中存在两种不同的纳米物体群体。大多数初级群是由垂直对齐的ZnO纳米线制成,其在Au(111)颗粒的顶部上是异质的。发现所得的外延菌株在Au / ZnO界面处完全释放。相反,少数型次级群由ZnO纳米线组成,其具有相对于普通到衬底表面约20度的显着平均倾斜角度,这可能是在Au(111)颗粒的(211)刻面上的(211)刻面上。进一步发现ZnO纳米线的伸长率受到研究条件下的C面顶面的表面反应的限制。通过使用电子束光刻实现选择性区域的生长,控制ZnO纳米线的位置,但是在集合中仍然共存了两个群体。这些发现提供了对金属种子层上ZnO纳米线的形成机制的深入理解,这应该考虑到它们更有效地集成到压电装置中。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号