Combining double patterning with self-assembled block copolymer lamellae to fabricate 10.5 nm full-pitch line/space patterns

摘要

Directed self-assembly of block copolymers and self-aligned double patterning are two commonly used pitch scaling techniques to increase the density of lithographic features. In this work, both of these pitch scaling techniques were combined, enabling patterning at even higher densities. In this process, directed self-assembly of a high-chi block copolymer was used to form a line/space pattern, which served as a template for mandrels. Via these mandrels, atomic layer deposition was used to deposit a thin aluminium oxide spacer. By this method, a total pitch scaling factor of 8, equivalent to a 10.5 nm full pitch, was reached. The types of defects and the line roughness at the different steps of the process were discussed.