首页> 外文期刊>Nanotechnology >Monolithic radio frequency SiN_x self-rolledup nanomembrane interdigital capacitor modeling and fabrication
【24h】

Monolithic radio frequency SiN_x self-rolledup nanomembrane interdigital capacitor modeling and fabrication

机译:单片射频SIN_X自轧纳米汉汉叉指式电容器建模与制造

获取原文
获取原文并翻译 | 示例
           

摘要

Monolithic capacitors operating at radio frequencies (RF) serve as critical components in integrated circuits for wireless communication. Design and fabrication innovations for high capacitance density RF capacitors are highly desired for the miniaturization of RFIC chips. However, practical and simple solutions are limited by existing capabilities in three-dimensional (3D) structure construction and the effective configuration of electrodes. We report a unique route to achieve unprecedentedly high capacitance density at a high operating frequency through a capacitor configuration of 3D coil interdigital electrodes using planar semiconductor processing compatible materials and fabrication methods. A systematic mechanical-electrical design principle is demonstrated, and fabricated devices show a maximum 21.5 pF capacitance, which is 17.2× larger after rolling up. The corresponding capacitance density is as large as 371 pF mm~(-2), with resonant frequency of 1.5 GHz. The performance could be improved significantly by simply rolling up more turns with minimal change to the area footprint.
机译:在无线电频率(RF)上操作的单片电容器用作无线通信的集成电路中的关键组件。高电容密度RF电容器的设计和制造创新对于RFIC芯片的小型化非常需要。然而,实用和简单的解决方案受三维(3D)结构结构的现有能力和电极的有效配置的限制。我们报告了一种独特的路线,通过使用平面半导体处理兼容材料和制造方法,通过3D线圈偶极电极的电容器配置以高工作频率实现前所未有的高电容密度。对系统的机械电气设计原理进行了说明,制造的设备显示出最大21.5PF电容,在滚动后较大17.2倍。相应的电容密度与371pf mm〜(-2)大,具有谐振频率为1.5 GHz。通过简单地卷起更大的变化,可以显着提高性能,这对区域足迹的最小变化。

著录项

  • 来源
    《Nanotechnology》 |2019年第36期|共7页
  • 作者单位

    School of Microelectronics Engineering Academy of Photoelectric Technology Soft Membrane Electronic Technology Laboratory Hefei University of Technology Hefei Anhui 230601 People's Republic of China;

    School of Microelectronics Engineering Academy of Photoelectric Technology Soft Membrane Electronic Technology Laboratory Hefei University of Technology Hefei Anhui 230601 People's Republic of China;

    Department of Electrical and Computer Engineering Micro and Nanotechnology Laboratory University of Illinois Urbana IL 61801 United States of America;

    Department of Electrical and Computer Engineering Micro and Nanotechnology Laboratory University of Illinois Urbana IL 61801 United States of America;

    School of Microelectronics Engineering Academy of Photoelectric Technology Soft Membrane Electronic Technology Laboratory Hefei University of Technology Hefei Anhui 230601 People's Republic of China;

    Department of Electrical and Computer Engineering Micro and Nanotechnology Laboratory University of Illinois Urbana IL 61801 United States of America;

    Department of Electrical and Computer Engineering Micro and Nanotechnology Laboratory University of Illinois Urbana IL 61801 United States of America;

    Department of Electrical and Computer Engineering Micro and Nanotechnology Laboratory University of Illinois Urbana IL 61801 United States of America;

    Department of Electrical and Computer Engineering Micro and Nanotechnology Laboratory University of Illinois Urbana IL 61801 United States of America;

    School of Microelectronics Engineering Academy of Photoelectric Technology Soft Membrane Electronic Technology Laboratory Hefei University of Technology Hefei Anhui 230601 People's Republic of China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    interdigital capacitor; radio frequency; self-rolled-up nanomembrane;

    机译:代射电容器;射频;自轧纳米膜;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号