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Characterizing the local oxidation nanolithography on highly oriented pyrolytic graphite

机译:在高度取向热解石墨上表征局部氧化纳米线

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Here, we characterize the patterns obtained through local oxidation nanolithography (LON) on highly oriented pyrolytic graphite as the write bias, speed, and force were varied. Different types of patterns-bumps, cracked bumps, and trenches-were obtained and characterized using four shape descriptors-pattern width, pattern height, cut width and cut depth. With an increase in write bias the obtained pattern type varied from bumps to cracked bumps to trenches. The use of a bias above 7.25 V resulted in trenches with increased variability in shape descriptor values. Similarly, an increase in write speed demonstrated a transition from trenches to cracked bumps to bumps. An increase in write force from 75 to 150 nN showed a shift in the threshold voltage from 4.25 V to just under 3.75 V and formed cracked bumps instead of bumps. These findings help solve the mystery of why bumps were not reported at threshold voltages before 2008. We believe these findings will be enable uniform reproduction and report of LON pattern.
机译:这里,我们表征通过局部氧化纳米光刻(LON)在高度取向的热解石墨上获得的图案作为写入偏差,速度和力改变。获得不同类型的图案 - 凸块,破裂的凸块和沟槽 - 使用四个形状描述夹宽度,图案高度,切割宽度和切割深度来实现并表征。随着写入偏置的增加,所获得的图案类型从凸块变化到裂纹到沟槽的破裂凸块。在7.25 V上方的使用导致沟槽具有增加的形状描述符值的可变性。类似地,写入速度的增加表明从沟槽到破裂凸起到凸块的过渡。从75到150 nn的写力的增加显示阈值电压的偏移从4.25 V到仅在3.75V下方的3.75V下方,形成裂纹凸块而不是凸块。这些发现有助于解决为什么2008年之前未报告爆破率的凹凸。我们认为这些发现将能够统一再现和Lon模式的报告。

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