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Ultra-efficient spin orbit torque induced magnetic switching in W/CoFeB/MgO structures

机译:超高效的旋转轨道扭矩引起W / CoFeB / MgO结构中的磁力开关

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摘要

Spin-orbit torque (SOT) induced magnetic switching in heavy metal/ferromagnet structures with perpendicular magnetic anisotropy (PMA) is promising for energy efficient spintronic devices. Here, we studied the SOT induced magnetic switching in perpendicular W/Co20Fe60B20/MgO structures. We demonstrated the critical current density for the SOT induced switching is as low as 1.15 x 10(6) A cm(-2) in the presence of an in-plane magnetic field, which is very energy efficient in terms of magnetic switching. We attribute this ultra-efficient magnetic switching to the high spin Hall angle of the W layer and the ultra-low domain wall pinning field of the CoFeB. The SOT induced switching procedure was directly observed by a high-resolution Kerr microscopy. Furthermore, the weak Dzyaloshinsky-Moriya interactions are shown to be favorable for switching. Our experiments physically explained the ultra-efficient SOT induced magnetic switching in W/CoFeB/MgO structures, and direct observation of the switching procedure can improve the comprehensive understanding of this dynamic process and further promote the study of SOT based memory devices.
机译:自旋 - 轨道扭矩(SOT)诱发的磁性切换在重金属/具有垂直磁各向异性(PMA)强磁性体的结构是有希望的用于高效节能自旋电子器件。在这里,我们研究了在垂直W / Co20Fe60B20 / MgO的结构SOT诱发的磁性切换。我们证明了SOT引起的切换的临界电流密度是低至1.15×10(6)厘米(-2)的面内的磁场,这是非常节能在磁开关方面的存在。我们认为这超高效磁性切换到W层的高自旋霍尔角和的CoFeB的超低畴壁钉扎场。的SOT引起的切换过程直接用高分辨率克尔显微镜观察。此外,弱Dzyaloshinsky-守谷相互作用被示出为用于切换是有利的。我们的实验在W /的CoFeB / MgO的结构物理解释了超高效SOT诱发的磁性切换,切换过程的直接观察可以提高这一动态过程的全面了解,进一步促进基于SOT存储设备的研究。

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