机译:自催化GaAs纳米线中掺杂剂浓度的梯度
Univ Fed Sao Carlos Phys Dept Sao Carlos SP Brazil;
Tampere Univ Optoelect Res Ctr Phys Unit Tampere Finland;
Tampere Univ Optoelect Res Ctr Phys Unit Tampere Finland;
Univ Fed Sao Carlos Elect Engn Dept Sao Carlos SP Brazil;
Univ Fed Sao Carlos Phys Dept Sao Carlos SP Brazil;
Tampere Univ Optoelect Res Ctr Phys Unit Tampere Finland;
Univ Sao Paulo FZEA ZAB Pirassununga SP Brazil;
Tampere Univ Elect &
Commun Engn Tampere Finland;
Univ Fed Sao Carlos Phys Dept Sao Carlos SP Brazil;
Tampere Univ Optoelect Res Ctr Phys Unit Tampere Finland;
nanowires; GaAs; Be doping; concentration profiles;
机译:自催化GaAs纳米线中掺杂剂浓度的梯度
机译:Si(111)上生长的自催化GaAs和GaAs / GaAsSb纳米线的晶相工程
机译:硅上自催化GaAs / AlGaAs核壳纳米线的最佳壳层厚度的确定
机译:在自催化生长期间形成垂直纳米线和GaAs结晶簇的条件
机译:催化剂介导的III-V族纳米线的生长和光学性质:金催化砷化镓和自催化磷化铟
机译:用于自然-SiOx / Si(111)底物的低温诱导孔形成用于自催化的GaAs纳米线的生长
机译:GaAsP壳对硅上生长的自催化Gaas纳米线光学性能的影响