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首页> 外文期刊>Nano letters >Deciphering Charging Status, Absolute Quantum Efficiency, and Absorption Cross Section of Multicarrier States in Single Colloidal Quantum Dots
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Deciphering Charging Status, Absolute Quantum Efficiency, and Absorption Cross Section of Multicarrier States in Single Colloidal Quantum Dots

机译:在单个胶体量子点中解密充电状态,绝对量子效率和多载波状态的吸收横截面

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摘要

Upon photo- or electrical-excitation, colloidal quantum dots (QDs) are often found in multicarrier states due to multiphoton absorption, photocharging, or imbalanced carrier injection of the QDs. While many of these multicarrier states are observed in single-dot spectroscopy, their properties are not well studied due to random charging/discharging, emission intensity intermittency, and uncontrolled surface defects of single QDs. Here we report in situ deciphering of the charging status, precisely assessing the absorption cross section, and determining the absolute emission quantum yield of monoexciton and biexciton states for neutral, positively charged, and negatively charged single core/shell CdSe/CdS QDs. We uncover very different photon statistics of the three charge states in single QDs and unambiguously identify their charge signs together with the information on their photoluminescence decay dynamics. We then show their distinct photoluminescence saturation behaviors and evaluate the absolute values of absorption cross sections and quantum efficiencies of monoexcitons and biexcitons. We demonstrate that the addition of an extra hole or electron in a QD not only changes its emission properties but also varies its absorption cross section.
机译:在照片或电激励时,由于多光子吸收,光子或QD的不平衡载体注入,通常在多载波状态中发现胶体量子点(QDS)。虽然在单点光谱中观察到许多这些多载波状态,但由于随机充电/放电,发射强度间歇性和单QD的不受控制的表面缺陷,它们的性质不受很好地研究。在这里,我们向充电状态进行了原位解密,精确地评估了吸收横截面,并确定了单甲硝酮和Biexciton状态的绝对排放量子产量,用于中性,带正电荷,带负电的单核/壳Cdse / Cds QD。我们在单个QD中揭示了三个充电状态的非常不同的光子统计,并明确地将其充电标志与其光致发光衰减动态的信息一起识别。然后,我们展示了他们不同的光致发光饱和度行为,评价单亚甲基和Biexcitons的吸收横截面和量子效率的绝对值。我们证明QD中的额外孔或电子不仅改变其排放特性,而且还改变其吸收横截面。

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