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Nanoscale Relative Emission Efficiency Mapping Using Cathodoluminescence g(2) Imaging

机译:纳米级相对发射效率测定使用阴极致发光G (2)成像

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Cathodoluminescence (CL) imaging spectroscopy provides two-dimensional optical excitation images of photonic nanostructures with a deep-subwavelength spatial resolution. So far, CL imaging was unable to provide a direct measurement of the excitation and emission probabilities of photonic nanostructures in a spatially resolved manner. Here, we demonstrate that by mapping the cathodoluminescence autocorrelation function g~((2)) together with the CL spectral distribution the excitation and emission rates can be disentangled at every excitation position. We use InGaN/GaN quantum wells in GaN nanowires with diameters in the range 200–500 nm as a model system to test our new g~((2)) mapping methodology and find characteristic differences in excitation and emission rates both between wires and within wires. Strong differences in the average CL intensity between the wires are the result of differences in the emission efficiencies. At the highest spatial resolution, intensity variations observed within wires are the result of excitation rates that vary with the nanoscale geometry of the structures. The fact that strong spatial variations observed in the CL intensity are not only uniquely linked to variations in emission efficiency but also linked to excitation efficiency has profound implications for the interpretation of the CL data for nanostructured geometries in general.
机译:阴极发光(CL)成像光谱提供具有深度亚波长空间分辨率的光子纳米结构的二维光学激发图像。到目前为止,CL成像不能以空间分辨的方式直接测量光子纳米结构的激发和发射概率。在这里,我们证明,通过与CL光谱分布一起映射所述阴极发光的自相关函数g〜((2))的激发和发射速率可以在每一个激励位置上解开。我们在GaN纳米线中使用IngaN / GaN量子阱,直径为200-500nm的直径,作为模型系统,以测试我们的新G〜((2))映射方法,并在电线和内部找到励磁和排放率的特征差异电线。电线之间平均Cl强度的强烈差异是排放效率的差异的结果。在最高空间分辨率下,在线内观察到的强度变化是激励率的结果,其具有结构的纳米级几何形状。在CL强度观察到的强度空间变化的事实不仅与发射效率的变化唯一连接,而且与激发效率相连,对通常的纳米结构几何形状的CL数据的解释具有深远的影响。

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