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机译:纳米级相对发射效率测定使用阴极致发光G (2) sup>成像
Center for Nanophotonics AMOLF Science Park 104 1098 XG Amsterdam The Netherlands;
Center for Nanophotonics AMOLF Science Park 104 1098 XG Amsterdam The Netherlands;
Department of Materials Science and Engineering Canadian Centre for Electron Microscopy McMaster University 1280 Main Street West Hamilton Ontario L8S 4M1 Canada;
Department of Electrical and Computer Engineering McGill University 3480 University Street Montreal Quebec H3A 0E9 Canada;
Department of Electrical and Computer Engineering McGill University 3480 University Street Montreal Quebec H3A 0E9 Canada;
Center for Nanophotonics AMOLF Science Park 104 1098 XG Amsterdam The Netherlands;
autocorrelation function; cathodoluminescence; nano-optics; SEM; Semiconductor; spectroscopy;
机译:纳米级相对发射效率测定使用阴极致发光G (2) sup>成像
机译:在纳米级阴离子发光的量子盘结构中竞争纳米簇发射的空间上解决了研究
机译:直接证据表明,使用纳米级阴极发光技术在穿线位错处形成的GaN岛发出了单个量子点:紫外中的单个光子源
机译:用微电偶发光测量观察CDSE单量子点和空间映射的排放
机译:发光聚合物囊泡:用于体内光学成像的纳米软探针。
机译:纳米尺度的相对排放效率图阴极发光g(2)成像
机译:纳米级相对发射效率使用阴极发光G(2)成像
机译:利用等离子体爆炸成像技术绘制飞秒激光脉冲纳米级吸收图。