...
机译:在 2 se 3 sub>中,在超薄二维层半导体中涉立平面内的面内和面外铁电性
Physical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal Jeddah 23955-6900 Kingdom of Saudi Arabia;
Physical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal Jeddah 23955-6900 Kingdom of Saudi Arabia;
Department of Chemical Engineering and Materials Science University of California - Irvine Irvine California 92697 America;
Department of Physics and Astronomy University of California - Irvine Irvine California 92697 America;
Department of Chemical Engineering and Materials Science University of California - Irvine Irvine California 92697 America;
Key Laboratory of Flexible Electronics and Institute of Advanced Materials Jiangsu National Synergetic Innovation Center for Advanced Materials Nanjing Tech University Nanjing Jiangsu 211816 China;
ICQD Hefei National Laboratory for Physical Sciences at the Microscale Synergetic Innovation Center of Quantum Information and Quantum Physics and Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS) University of Science and Technology of;
Department of Chemical Engineering and Materials Science University of California - Irvine Irvine California 92697 America;
Key Laboratory of Flexible Electronics and Institute of Advanced Materials Jiangsu National Synergetic Innovation Center for Advanced Materials Nanjing Tech University Nanjing Jiangsu 211816 China;
Physical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal Jeddah 23955-6900 Kingdom of Saudi Arabia;
Physical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal Jeddah 23955-6900 Kingdom of Saudi Arabia;
Physical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal Jeddah 23955-6900 Kingdom of Saudi Arabia;
Physical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal Jeddah 23955-6900 Kingdom of Saudi Arabia;
ICQD Hefei National Laboratory for Physical Sciences at the Microscale Synergetic Innovation Center of Quantum Information and Quantum Physics and Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS) University of Science and Technology of;
Department of Chemical Engineering and Materials Science University of California - Irvine Irvine California 92697 America;
Physical Sciences and Engineering Division King Abdullah University of Science and Technology Thuwal Jeddah 23955-6900 Kingdom of Saudi Arabia;
2D materials; ferroelectric; Inlt; subgt; 2lt; /subgt; Selt; subgt; 3lt; /subgt; semiconductor; switchable diode;
机译:在 2 se 3 sub>中,在超薄二维层半导体中涉立平面内的面内和面外铁电性
机译:房间 - 温度外平面和二维β-inse纳米薄片的面内铁电性
机译:CVD生长的超薄范德华a-In2Se3层中坚固的平面外铁电的温度和厚度依赖性
机译:平面内和面外对外定向对Si基材薄膜铁电PZT红外传感器铁电性能的影响
机译:单层组件中结构和反应性的研究:1.链烷硫醇盐自组装单层在Au上的臭氧分解。 2.超薄金膜的面内电阻率是一种高灵敏度的液-金属界面化学吸附分子区分探针。
机译:氦离子束在层状铁电半导体中的化学变化
机译:单层RES2:具有可调谐面内各向异性的二维半导体